Inventor
GRUDOWSKI PAUL A
US27 patents
⚠️ This page may combine multiple inventors who share the name “GRUDOWSKI PAUL A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FREESCALE SEMICONDUCTOR INC
24 patentsUS6864135B2Mar 8, 2005
Semiconductor fabrication process using transistor spacers of differing widths
FREESCALE SEMICONDUCTOR INC82 citations98
US7416605B2Aug 26, 2008
Anneal of epitaxial layer in a semiconductor device
FREESCALE SEMICONDUCTOR INC109 citations96
US7132704B2Nov 7, 2006
Transistor sidewall spacer stress modulation
FREESCALE SEMICONDUCTOR INC14 citations92
US6902971B2Jun 7, 2005
Transistor sidewall spacer stress modulation
FREESCALE SEMICONDUCTOR INC48 citations92
US7736957B2Jun 15, 2010
Method of making a semiconductor device with embedded stressor
FREESCALE SEMICONDUCTOR INC20 citations90
US7491630B2Feb 17, 2009
Undoped gate poly integration for improved gate patterning and cobalt silicide extendibility
FREESCALE SEMICONDUCTOR INC11 citations84
US7420202B2Sep 2, 2008
Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device
FREESCALE SEMICONDUCTOR INC13 citations83
US7402472B2Jul 22, 2008
Method of making a nitrided gate dielectric
FREESCALE SEMICONDUCTOR INC9 citations83
US7442598B2Oct 28, 2008
Method of forming an interlayer dielectric
FREESCALE SEMICONDUCTOR INC10 citations78
US7538002B2May 26, 2009
Semiconductor process integrating source/drain stressors and interlevel dielectric layer stressors
FREESCALE SEMICONDUCTOR INC7 citations73
US7504289B2Mar 17, 2009
Process for forming an electronic device including transistor structures with sidewall spacers
FREESCALE SEMICONDUCTOR INC7 citations73
US8980734B2Mar 17, 2015
Gate security feature
FREESCALE SEMICONDUCTOR INC3 citations63
US7843011B2Nov 30, 2010
Electronic device including insulating layers having different strains
FREESCALE SEMICONDUCTOR INC2 citations63
US7511360B2Mar 31, 2009
Semiconductor device having stressors and method for forming
FREESCALE SEMICONDUCTOR INC6 citations63
US7714318B2May 11, 2010
Electronic device including a transistor structure having an active region adjacent to a stressor layer
FREESCALE SEMICONDUCTOR INC5 citations62
US7678698B2Mar 16, 2010
Method of forming a semiconductor device with multiple tensile stressor layers
FREESCALE SEMICONDUCTOR INC3 citations62
US7687354B2Mar 30, 2010
Fabrication of a semiconductor device with stressor
FREESCALE SEMICONDUCTOR INC6 citations61
US7579228B2Aug 25, 2009
Disposable organic spacers
FREESCALE SEMICONDUCTOR INC5 citations61
US7214590B2May 8, 2007
Method of forming an electronic device
FREESCALE SEMICONDUCTOR INC5 citations61
US7528029B2May 5, 2009
Stressor integration and method thereof
FREESCALE SEMICONDUCTOR INC6 citations60
US6846716B2Jan 25, 2005
Integrated circuit device and method therefor
FREESCALE SEMICONDUCTOR INC5 citations59
US8021957B2Sep 20, 2011
Process of forming an electronic device including insulating layers having different strains
FREESCALE SEMICONDUCTOR INC0 citations52
US7745298B2Jun 29, 2010
Method of forming a via
FREESCALE SEMICONDUCTOR INC0 citations41
US7700499B2Apr 20, 2010
Multilayer silicon nitride deposition for a semiconductor device
FREESCALE SEMICONDUCTOR INC0 citations41
WINSTEAD BRIAN A
2 patentsUS9847389B2Dec 19, 2017
Semiconductor device including an active region and two layers having different stress characteristics
WINSTEAD BRIAN A0 citations51
US8569858B2Oct 29, 2013
Semiconductor device including an active region and two layers having different stress characteristics
WINSTEAD BRIAN A0 citations51