Inventor
BOUTROS KARIM S
US23 patents
⚠️ This page may combine multiple inventors who share the name “BOUTROS KARIM S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HRL LAB LLC
10 patentsUS9337332B2May 10, 2016
III-Nitride insulating-gate transistors with passivation
HRL LAB LLC36 citations93
US9059200B1Jun 16, 2015
III-Nitride metal-insulator-semiconductor field-effect transistor
HRL LAB LLC8 citations84
US10447261B1Oct 15, 2019
Dual gate III-switch for high voltage current relay
HRL LAB LLC6 citations83
US9490357B2Nov 8, 2016
Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gas
HRL LAB LLC7 citations83
US9077335B2Jul 7, 2015
Reduction of the inductance of power loop and gate loop in a half-bridge converter with vertical current loops
HRL LAB LLC13 citations82
US10192986B1Jan 29, 2019
HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same
HRL LAB LLC5 citations81
US10700201B2Jun 30, 2020
HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same
HRL LAB LLC2 citations72
US8999780B1Apr 7, 2015
Non-uniform two-dimensional electron gas profile in III-nitride HEMT devices
HRL LAB LLC3 citations62
US10325997B2Jun 18, 2019
Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gas
HRL LAB LLC0 citations51
US8933487B2Jan 13, 2015
Controlling lateral two-dimensional electron hole gas HEMT in type III nitride devices using ion implantation through gray scale mask
HRL LAB LLC0 citations51
KHALIL SAMEH G
3 patentsUS8680536B2Mar 25, 2014
Non-uniform two dimensional electron gas profile in III-Nitride HEMT devices
KHALIL SAMEH G15 citations90
US9379195B2Jun 28, 2016
HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same
KHALIL SAMEH G3 citations71
US9000484B2Apr 7, 2015
Non-uniform lateral profile of two-dimensional electron gas charge density in type III nitride HEMT devices using ion implantation through gray scale mask
KHALIL SAMEH G0 citations50