Dual gate III-switch for high voltage current relay

Abstract

Photo-switchable relays and switches and dual gate III-switches having a photo switchable normally-off region located in the channel layer of the device are disclosed where irradiation of the normally-off regions with an appropriate wavelength of radiation results in generation of charge carriers and the flow of electricity through the device being turned on and off in response to the radiation being turned on and off.

We claim: 
     
       1. An electronic relay comprising a two dimensional electron gas (2DEG) connecting a first photoswitch to a second photoswitch. 
     
     
       2. The electronic relay of  claim 1 , wherein the first photoswitch comprises a first normally off region connected to the 2DEG and the second photoswitch comprises a second normally off region connected to the 2DEG. 
     
     
       3. The electronic relay of  claim 2 , wherein when the first photoswitch is irradiated with light of a first suitable wavelength, the first normally off region becomes conductive and when light of a second suitable wavelength irradiates the second photoswitch, the second normally off region becomes conductive. 
     
     
       4. The electronic relay of  claim 3 , wherein the first and second wavelengths are substantially the same wavelength. 
     
     
       5. The electronic relay of  claim 3 , further comprising a first and second gate and a first and second ohmic contact, wherein the first and second gates are located proximate to the first and second normally off regions, respectively, and the first and second ohmic contacts, respectively, and the first gate is in electrical communication with the first ohmic contact and the second gate is in electrical communication with the second ohmic contact. 
     
     
       6. The electronic relay of  claim 5 , wherein the first and second gates are configured to convey light incident on each respective gate to the first and second normally off region, respectively. 
     
     
       7. The electronic relay of  claim 6 , wherein the first gate conveys more than 50% of the light of the first wavelength it is irradiated with. 
     
     
       8. The electronic relay of  claim 6 , wherein the second gate conducts more than 50% of the light of the second wavelength it is irradiated with. 
     
     
       9. The electronic relay of  claim 6 , wherein the first gate is a transparent gate comprising SnO. 
     
     
       10. A method of making the electronic relay of  claim 2 , wherein the method comprises forming the first and second normally off regions by one or more methods from the list consisting of recess etching the supply layer, including a P-type material in the normally off region, and including a P-type gate, where the method for the first normally off region is different from the method for the second normally off region. 
     
     
       11. A method of making the electronic relay of  claim 2 , wherein the method comprises forming the first and second normally off regions by one or more methods from the list consisting of recess etching the supply layer, including a P-type material in the normally off region, and including a P-type gate, where the method for the first normally off region is the same as the method for the second normally off region. 
     
     
       12. The electronic relay of  claim 1 , wherein one of the first and second photoswitches is a back-to-back AC high-voltage III-Nitride photo-diode. 
     
     
       13. The electronic relay of  claim 1 , wherein the first and second photoswitches are photo-diodes. 
     
     
       14. The electronic relay of  claim 1 , wherein the first photoswitch comprises a first photo-transistor. 
     
     
       15. The electronic relay of  claim 1 , wherein the first photoswitch comprises a photo-transistor and the second photoswitch comprises a second photo-transistor. 
     
     
       16. The electronic relay of  claim 1 , wherein the relay has a switching time for switching from an off state to an on state and the switching time is less than 1000 ns. 
     
     
       17. The electronic relay of  claim 1 , wherein the relay has a switching time for switching from an off state to an on state and the switching time is less than 100 ns. 
     
     
       18. The electronic relay of  claim 1 , wherein the relay has a switching time for switching from an off state to an on state and the switching time is less than 10 ns. 
     
     
       19. The electronic relay of  claim 1 , wherein the 2DEG occurs at an interface of a Group III channel layer and a Group III Nitride supply layer. 
     
     
       20. The electronic relay of  claim 1 , wherein the 2DEG occurs at an interface of GaN and AlGaN. 
     
     
       21. The electronic relay of  claim 1 , further comprising a supply layer and a channel layer, wherein the 2DEG forms at an interface between the supply layer and the channel layer.