Inventor · disambiguated record
Karim S. Boutros
Also filed as: BOUTROS KARIM · BOUTROS KARIM S
24 granted patents·5 pending applications·732 citations·filing 1999–2018
96Inventor score
Top patents by PatentIndex Score
29 records- 0199US6350944B1Solar module array with reconfigurable tileHUGHES ELECTRONICS CORP·Filed 2000·Granted Feb 26, 2002·298 cites·14 claims
- 0296US9337332B2III-Nitride insulating-gate transistors with passivationHRL LAB LLC·Filed 2014·Granted May 10, 2016·36 cites·30 claims
- 0396US8530978B1High current high voltage GaN field effect transistors and method of fabricating sameCHU RONGMING·Filed 2011·Granted Sep 10, 2013·58 cites·20 claims
- 0495US8124505B1Two stage plasma etching method for enhancement mode GaN HFETBURNHAM SHAWN D·Filed 2010·Granted Feb 28, 2012·79 cites·10 claims
- 0594US8772832B2GaN HEMTs with a back gate connected to the sourceBOUTROS KARIM S·Filed 2011·Granted Jul 8, 2014·27 cites·11 claims
- 0692US9368622B1Stitched gate GaN HEMTsBOUTROS KARIM S·Filed 2011·Granted Jun 14, 2016·20 cites·13 claims
- 0792US8680536B2Non-uniform two dimensional electron gas profile in III-Nitride HEMT devicesKHALIL SAMEH G·Filed 2012·Granted Mar 25, 2014·15 cites·15 claims
- 0891US8853709B2III-nitride metal insulator semiconductor field effect transistorCHU RONGMING·Filed 2012·Granted Oct 7, 2014·12 cites·13 claims
- 0991US7893791B2Gallium nitride switch methodologyBOEING CO·Filed 2008·Granted Feb 22, 2011·24 cites·20 claims
- 1090US9077335B2Reduction of the inductance of power loop and gate loop in a half-bridge converter with vertical current loopsHRL LAB LLC·Filed 2013·Granted Jul 7, 2015·13 cites·24 claims
- 1190US8653559B2AlGaN/GaN hybrid MOS-HFETCORRION ANDREA·Filed 2011·Granted Feb 18, 2014·19 cites·24 claims
- 1289US6635507B1Monolithic bypass-diode and solar-cell string assemblyHUGHES ELECTRONICS CORP·Filed 1999·Granted Oct 21, 2003·87 cites·7 claims
- 1388US10447261B1Dual gate III-switch for high voltage current relayHRL LAB LLC·Filed 2016·Granted Oct 15, 2019·6 cites·21 claims
- 1488US10192986B1HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the sameHRL LAB LLC·Filed 2016·Granted Jan 29, 2019·5 cites·7 claims
- 1588US9059200B1III-Nitride metal-insulator-semiconductor field-effect transistorHRL LAB LLC·Filed 2014·Granted Jun 16, 2015·8 cites·12 claims
- 1686US9490357B2Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gasHRL LAB LLC·Filed 2014·Granted Nov 8, 2016·7 cites·12 claims
- 1778US10700201B2HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the sameHRL LAB LLC·Filed 2018·Granted Jun 30, 2020·2 cites·6 claims
- 1878US8999780B1Non-uniform two-dimensional electron gas profile in III-nitride HEMT devicesHRL LAB LLC·Filed 2014·Granted Apr 7, 2015·3 cites·21 claims
- 1971US9379195B2HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the sameKHALIL SAMEH G·Filed 2012·Granted Jun 28, 2016·3 cites·7 claims
- 2064US9773884B2III-nitride transistor with engineered substrateHRL LAB LLC·Filed 2013·Granted Sep 26, 2017·2 cites·14 claims
- 2162US7151307B2Integrated semiconductor circuits on photo-active Germanium substratesBOEING CO·Filed 2003·Granted Dec 19, 2006·8 cites·8 claims
- 2256US8933487B2Controlling lateral two-dimensional electron hole gas HEMT in type III nitride devices using ion implantation through gray scale maskHRL LAB LLC·Filed 2013·Granted Jan 13, 2015·0 cites·10 claims
- 2351US10325997B2Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gasHRL LAB LLC·Filed 2016·Granted Jun 18, 2019·0 cites·12 claims
- 2451US9000484B2Non-uniform lateral profile of two-dimensional electron gas charge density in type III nitride HEMT devices using ion implantation through gray scale maskKHALIL SAMEH G·Filed 2012·Granted Apr 7, 2015·0 cites·14 claims
- 2540US2002164834A1Monolithic bypass-diode and solar-cell string assemblyFiled 2002·Application pending·0 cites
- 2639US2013328061A1Normally-off gallium nitride transistor with insulating gate and method of making the sameCHU RONGMING·Filed 2012·Application pending·0 cites
- 2737US2011180855A1Non-direct bond copper isolated lateral wide band gap semiconductor deviceGM GLOBAL TECH OPERATIONS INC·Filed 2010·Application pending·0 cites
- 2833US2006139739A1Quasi-optical array amplifierROCKWELL SCIENT LICENSING LLC·Filed 2004·Application pending·0 cites
- 2933US2002168809A1Semiconductor circuits and devices on germanium substratesFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →