Inventor

LAM CHUNG HON

US111 patents

⚠️ This page may combine multiple inventors who share the name “LAM CHUNG HON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LAM CHUNG HON

IBM

Methods for forming uniform lithographic features

FinFET CMOS with NVRAM capability

Phase change memory cell with limited switchable volume

Heat-shielded low power PCM-based reprogrammable EFUSE device

Reprogrammable fuse structure and method

Multi-bit phase change memory cell and multi-bit phase change memory including the same, method of forming a multi-bit phase change memory, and method of programming a multi-bit phase change memory

Enhanced programming performance in a nonvolatile memory device having a bipolar programmable storage element

Self-aligned junction isolation

Method to create EEPROM memory structures integrated with high performance logic and NVRAM, and operating conditions for the same

Single mask adder phase change memory element

Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement

Write operations for phase-change-material memory

Layout and process to contact sub-lithographic structures

Non-volatile content addressable memory using phase-change-material memory elements

FinFET CMOS with NVRAM capability

Process using poly-buffered STI

Method of forming merged self-aligned source and ONO capacitor for split gate non-volatile memory

Structure for confining the switching current in phase memory (PCM) cells

Non-volatile memory architecture employing bipolar programmable resistance storage elements

Process for forming a polysilicon electrode in a trench

DRAM cell with vertical CMOS transistor

Dual layer etch stop barrier

Fabricating a square spacer

Multi-bit memory error detection and correction system and method

Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement

Write operations for phase-change-material memory

Reprogrammable fuse structure and method

Phase change memory cell with vertical transistor

Current constricting phase change memory element structure

Process for PCM integration with poly-emitter BJT as access device

Phase change material based temperature sensor

High density content addressable memory using phase change devices

Block erase for phase change memory

MACRONIX INT CO LTD

Phase change memory with high endurance

Phase change memory program method without over-reset

Phase change memory cell having vertical channel access transistor

Fill-in etching free pore device

Memory cell having a buried phase change region and method for fabricating the same

Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing

Programmable resistive memory with diode structure

Phase change memory cells having vertical channel access transistor and memory plane

Fully self-aligned pore-type memory cell having diode access device

LUNG HSIANG-LAN

Phase change memory cell array with self-converged bottom electrode and method for manufacturing

Self aligned fin-type programmable memory cell

Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing

BREITWISCH MATTHEW J

Area efficient neuromorphic system that connects a FET in a diode configuration, and a variable resistance material to junctions of neuron circuit blocks

Area efficient neuromorphic circuits using field effect transistors (FET) and variable resistance material

LUNG HSIANG LAN

Method for manufacturing a phase change memory device with pillar bottom electrode

BREITWISCH MATTHEW JOSEPH

System for electronic learning synapse with spike-timing dependent plasticity using phase change memory

GLOBALFOUNDRIES INC

Phase-change memory cells