P

Inventor

CHEN TZU-YU

TW59 patents
⚠️ This page may combine multiple inventors who share the name “CHEN TZU-YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

34 patents
US10930333B2Feb 23, 2021

Embedded ferroelectric memory cell

TAIWAN SEMICONDUCTOR MFG CO LTD20 citations94
US11437084B2Sep 6, 2022

Embedded ferroelectric memory cell

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11088203B2Aug 10, 2021

3D RRAM cell structure for reducing forming and set voltages

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11869564B2Jan 9, 2024

Embedded ferroelectric memory cell

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11706930B2Jul 18, 2023

Semiconductor device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11296099B2Apr 5, 2022

FeRAM decoupling capacitor

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11227872B2Jan 18, 2022

FeRAM MFM structure with selective electrode etch

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11183503B2Nov 23, 2021

Memory cell having top and bottom electrodes defining recesses

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US9831262B2Nov 28, 2017

Embedded HKMG non-volatile memory

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9793286B2Oct 17, 2017

Embedded HKMG non-volatile memory

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US12322429B2Jun 3, 2025

Embedded ferroelectric memory cell

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11195840B2Dec 7, 2021

Method and structures pertaining to improved ferroelectric random-access memory (FeRAM)

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11037941B2Jun 15, 2021

Method for forming an integrated circuit and an integrated circuit

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12593458B2Mar 31, 2026

Semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12457751B2Oct 28, 2025

Interfacial layer with high texture uniformity for ferroelectric layer enhancement

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12432929B2Sep 30, 2025

Ferroelectric memory device with blocking layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12419056B2Sep 16, 2025

Integrated circuit and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12369327B2Jul 22, 2025

MFM device with an enhanced bottom electrode

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12356630B2Jul 8, 2025

Semiconductor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12167611B2Dec 10, 2024

FeRAM MFM structure with selective electrode etch

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12114509B2Oct 8, 2024

FeRAM decoupling capacitor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12082421B2Sep 3, 2024

Semiconductor device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11856788B2Dec 26, 2023

Semiconductor device and method of fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11849588B2Dec 19, 2023

Semiconductor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11800720B2Oct 24, 2023

Memory cell having a top electrode interconnect arranged laterally from a recess

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11785777B2Oct 10, 2023

FeRAM MFM structure with selective electrode etch

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11751401B2Sep 5, 2023

Integrated circuit and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11751406B2Sep 5, 2023

3D RRAM cell structure for reducing forming and set voltages

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11723213B2Aug 8, 2023

Method and structures pertaining to improved ferroelectric random-access memory (FeRAM)

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11557609B2Jan 17, 2023

Integrated circuit structure and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11296116B2Apr 5, 2022

Semiconductor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12238934B2Feb 25, 2025

Method of fabricating semiconductor device comprising ferroelectric layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12593454B2Mar 31, 2026

Ferroelectric tunnel junction structure with L-shaped spacers

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12171104B2Dec 17, 2024

Method and structures pertaining to improved ferroelectric random-access memory (FeRAM)

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

PIXART IMAGING INC

10 patents

NALCO CHEMICAL CO

3 patents

NALCO CO

1 patent

XYZPRINTING INC

1 patent

CHEN TZU YU

1 patent

Showing the top 50 of 59 patents by PatentIndex Score.