Inventor
YU KAI HUNG
US36 patents
⚠️ This page may combine multiple inventors who share the name “YU KAI HUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
32 patentsUS10770479B2Sep 8, 2020
Three-dimensional device and method of forming the same
TOKYO ELECTRON LTD20 citations94
US11456212B2Sep 27, 2022
Platform and method of operating for integrated end-to-end fully self-aligned interconnect process
TOKYO ELECTRON LTD4 citations84
US10378105B2Aug 13, 2019
Selective deposition with surface treatment
TOKYO ELECTRON LTD12 citations83
US10861744B2Dec 8, 2020
Platform and method of operating for integrated end-to-end CMP-less interconnect process
TOKYO ELECTRON LTD7 citations82
US10886173B2Jan 5, 2021
Platform and method of operating for integrated end-to-end fully self-aligned interconnect process
TOKYO ELECTRON LTD2 citations73
US10014213B2Jul 3, 2018
Selective bottom-up metal feature filling for interconnects
TOKYO ELECTRON LTD4 citations73
US11515203B2Nov 29, 2022
Selective deposition of conductive cap for fully-aligned-via (FAV)
TOKYO ELECTRON LTD2 citations72
US11024535B2Jun 1, 2021
Method for filling recessed features in semiconductor devices with a low-resistivity metal
TOKYO ELECTRON LTD4 citations71
US10157784B2Dec 18, 2018
Integration of a self-forming barrier layer and a ruthenium metal liner in copper metallization
TOKYO ELECTRON LTD4 citations71
US9607888B2Mar 28, 2017
Integration of ALD barrier layer and CVD Ru liner for void-free Cu filling
TOKYO ELECTRON LTD2 citations71
US9425093B2Aug 23, 2016
Copper wiring forming method, film forming system, and storage medium
TOKYO ELECTRON LTD2 citations63
US12417925B2Sep 16, 2025
Method of conductive material deposition
TOKYO ELECTRON LTD0 citations62
US11594451B2Feb 28, 2023
Platform and method of operating for integrated end-to-end fully self-aligned interconnect process
TOKYO ELECTRON LTD0 citations62
US11450562B2Sep 20, 2022
Method of bottom-up metallization in a recessed feature
TOKYO ELECTRON LTD0 citations62
US10923392B2Feb 16, 2021
Interconnect structure and method of forming the same
TOKYO ELECTRON LTD1 citations62
US10923394B2Feb 16, 2021
Platform and method of operating for integrated end-to-end fully self-aligned interconnect process
TOKYO ELECTRON LTD0 citations62
US10580691B2Mar 3, 2020
Method of integrated circuit fabrication with dual metal power rail
TOKYO ELECTRON LTD1 citations62
US11621190B2Apr 4, 2023
Method for filling recessed features in semiconductor devices with a low-resistivity metal
TOKYO ELECTRON LTD0 citations61
US10950444B2Mar 16, 2021
Metal hard mask layers for processing of microelectronic workpieces
TOKYO ELECTRON LTD1 citations61
US12341009B2Jun 24, 2025
Variable hardness amorphous carbon mask
TOKYO ELECTRON LTD0 citations60
US10541174B2Jan 21, 2020
Interconnect structure and method of forming the same
TOKYO ELECTRON LTD0 citations52
US12588262B2Mar 24, 2026
Sacrificial gate capping layer for gate protection during source/drain contact opening
TOKYO ELECTRON LTD0 citations51
US12568677B2Mar 3, 2026
Method of self-aligned dielectric wall formation for forksheet application
TOKYO ELECTRON LTD0 citations51
US11688604B2Jun 27, 2023
Method for using ultra thin ruthenium metal hard mask for etching profile control
TOKYO ELECTRON LTD0 citations51
US10700009B2Jun 30, 2020
Ruthenium metal feature fill for interconnects
TOKYO ELECTRON LTD0 citations51
US10056328B2Aug 21, 2018
Ruthenium metal feature fill for interconnects
TOKYO ELECTRON LTD1 citations51
US9711449B2Jul 18, 2017
Ruthenium metal feature fill for interconnects
TOKYO ELECTRON LTD1 citations51
US12598932B2Apr 7, 2026
Methods and structures for improving etch profile of underlying layers
TOKYO ELECTRON LTD0 citations50
US12588435B2Mar 24, 2026
Selective inhibition for selective metal deposition
TOKYO ELECTRON LTD0 citations50
US12482667B2Nov 25, 2025
Thermal etching of ruthenium
TOKYO ELECTRON LTD0 citations50
US12237216B2Feb 25, 2025
Method for filling recessed features in semiconductor devices with a low-resistivity metal
TOKYO ELECTRON LTD0 citations50
US10460988B2Oct 29, 2019
Removal method and processing method
TOKYO ELECTRON LTD0 citations39
PERICOM SEMICONDUCTOR CORP
3 patentsUS10027332B1Jul 17, 2018
Referenceless clock and data recovery circuits
PERICOM SEMICONDUCTOR CORP18 citations93
US10425124B1Sep 24, 2019
Repeaters with fast transitions from low-power standby to low-frequency signal transmission
PERICOM SEMICONDUCTOR CORP15 citations83
US10291241B2May 14, 2019
Referenceless clock and data recovery circuits
PERICOM SEMICONDUCTOR CORP2 citations72