P

Inventor

YU KAI HUNG

US36 patents
⚠️ This page may combine multiple inventors who share the name “YU KAI HUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOKYO ELECTRON LTD

32 patents
US10770479B2Sep 8, 2020

Three-dimensional device and method of forming the same

TOKYO ELECTRON LTD20 citations94
US11456212B2Sep 27, 2022

Platform and method of operating for integrated end-to-end fully self-aligned interconnect process

TOKYO ELECTRON LTD4 citations84
US10378105B2Aug 13, 2019

Selective deposition with surface treatment

TOKYO ELECTRON LTD12 citations83
US10861744B2Dec 8, 2020

Platform and method of operating for integrated end-to-end CMP-less interconnect process

TOKYO ELECTRON LTD7 citations82
US10886173B2Jan 5, 2021

Platform and method of operating for integrated end-to-end fully self-aligned interconnect process

TOKYO ELECTRON LTD2 citations73
US10014213B2Jul 3, 2018

Selective bottom-up metal feature filling for interconnects

TOKYO ELECTRON LTD4 citations73
US11515203B2Nov 29, 2022

Selective deposition of conductive cap for fully-aligned-via (FAV)

TOKYO ELECTRON LTD2 citations72
US11024535B2Jun 1, 2021

Method for filling recessed features in semiconductor devices with a low-resistivity metal

TOKYO ELECTRON LTD4 citations71
US10157784B2Dec 18, 2018

Integration of a self-forming barrier layer and a ruthenium metal liner in copper metallization

TOKYO ELECTRON LTD4 citations71
US9607888B2Mar 28, 2017

Integration of ALD barrier layer and CVD Ru liner for void-free Cu filling

TOKYO ELECTRON LTD2 citations71
US9425093B2Aug 23, 2016

Copper wiring forming method, film forming system, and storage medium

TOKYO ELECTRON LTD2 citations63
US12417925B2Sep 16, 2025

Method of conductive material deposition

TOKYO ELECTRON LTD0 citations62
US11594451B2Feb 28, 2023

Platform and method of operating for integrated end-to-end fully self-aligned interconnect process

TOKYO ELECTRON LTD0 citations62
US11450562B2Sep 20, 2022

Method of bottom-up metallization in a recessed feature

TOKYO ELECTRON LTD0 citations62
US10923392B2Feb 16, 2021

Interconnect structure and method of forming the same

TOKYO ELECTRON LTD1 citations62
US10923394B2Feb 16, 2021

Platform and method of operating for integrated end-to-end fully self-aligned interconnect process

TOKYO ELECTRON LTD0 citations62
US10580691B2Mar 3, 2020

Method of integrated circuit fabrication with dual metal power rail

TOKYO ELECTRON LTD1 citations62
US11621190B2Apr 4, 2023

Method for filling recessed features in semiconductor devices with a low-resistivity metal

TOKYO ELECTRON LTD0 citations61
US10950444B2Mar 16, 2021

Metal hard mask layers for processing of microelectronic workpieces

TOKYO ELECTRON LTD1 citations61
US12341009B2Jun 24, 2025

Variable hardness amorphous carbon mask

TOKYO ELECTRON LTD0 citations60
US10541174B2Jan 21, 2020

Interconnect structure and method of forming the same

TOKYO ELECTRON LTD0 citations52
US12588262B2Mar 24, 2026

Sacrificial gate capping layer for gate protection during source/drain contact opening

TOKYO ELECTRON LTD0 citations51
US12568677B2Mar 3, 2026

Method of self-aligned dielectric wall formation for forksheet application

TOKYO ELECTRON LTD0 citations51
US11688604B2Jun 27, 2023

Method for using ultra thin ruthenium metal hard mask for etching profile control

TOKYO ELECTRON LTD0 citations51
US10700009B2Jun 30, 2020

Ruthenium metal feature fill for interconnects

TOKYO ELECTRON LTD0 citations51
US10056328B2Aug 21, 2018

Ruthenium metal feature fill for interconnects

TOKYO ELECTRON LTD1 citations51
US9711449B2Jul 18, 2017

Ruthenium metal feature fill for interconnects

TOKYO ELECTRON LTD1 citations51
US12598932B2Apr 7, 2026

Methods and structures for improving etch profile of underlying layers

TOKYO ELECTRON LTD0 citations50
US12588435B2Mar 24, 2026

Selective inhibition for selective metal deposition

TOKYO ELECTRON LTD0 citations50
US12482667B2Nov 25, 2025

Thermal etching of ruthenium

TOKYO ELECTRON LTD0 citations50
US12237216B2Feb 25, 2025

Method for filling recessed features in semiconductor devices with a low-resistivity metal

TOKYO ELECTRON LTD0 citations50
US10460988B2Oct 29, 2019

Removal method and processing method

TOKYO ELECTRON LTD0 citations39

PERICOM SEMICONDUCTOR CORP

3 patents

DIODES INC

1 patent