Inventor

CHANG CHE-CHENG

TW396 patents

⚠️ This page may combine multiple inventors who share the name “CHANG CHE-CHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHANG CHE-CHENG

TAIWAN SEMICONDUCTOR MFG CO LTD

Semiconductor device and manufacturing method thereof

Structure and formation method of semiconductor device structure

Fin field effect transistor (FinFET) device and method for forming the same

FinFETs and methods of forming FinFETs

Semiconductor device and manufacturing method thereof

Structure and formation method of semiconductor device structure

Method for manufacturing semiconductor fin structure with extending gate structure

FinFET devices and methods of forming the same

Structure and formation method of semiconductor device structure

Fin field effect transistor, semiconductor device and fabricating method thereof

Semiconductor device and manufacturing method thereof

Method and structure for FinFET isolation

Semiconductor structure having a gas-filled gap

FinFET isolation structure and method for fabricating the same

Source and drain process for FinFET

Semiconductor device and manufacturing method thereof

FinFET isolation structure and method for fabricating the same

Method and structure for FinFET isolation

Structure and formation method of semiconductor device structure

Method and structure for FinFET isolation

Structure and formation method of semiconductor device structure with gate stack

Semiconductor device and manufacturing method thereof

Semiconductor structure and manufacturing method thereof

Method and structure for FinFET isolation

Semiconductor device with gate stack

Semiconductor structure with unleveled gate structure

Fin field effect transistor (FinFET) device structure with uneven gate structure

Semiconductor structure and fabricating method thereof

FinFET and method of forming same

Structure and formation method of semiconductor device structure

Gate structure of field effect transistor with footing

Self-aligned metal gate etch back process and device

Semiconductor device and method

Semiconductor device and method

Fin structure and method of forming same through two-step etching processes

Semiconductor device and method

Method and structure for FinFet isolation

Semiconductor device and methods of manufacture

Semiconductor structure and manufacturing method thereof

Method for manufacturing semiconductor structure

Structure and formation method of semiconductor device structure with gate stack

FinFET device and method of forming and monitoring quality of the same

Fin field effect transistor (FinFET) device structure with stop layer and method for forming the same

Gate structure of field effect transistor with footing

FinFET and method of forming same

Fin field effect transistor, semiconductor device and fabricating method thereof

Semiconductor structure and manufacturing method thereof

Mechanisms for forming FinFET device

Fin field effect transistor, semiconductor device and fabricating method thereof

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