Inventor
LIN BURN J
US31 patents
⚠️ This page may combine multiple inventors who share the name “LIN BURN J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
17 patentsUS5472814ADec 5, 1995
Orthogonally separated phase shifted and unphase shifted mask patterns for image improvement
IBM154 citations99
US4456371AJun 26, 1984
Optical projection printing threshold leveling arrangement
IBM178 citations99
US5565286AOct 15, 1996
Combined attenuated-alternating phase shifting mask structure and fabrication methods therefor
IBM126 citations98
US5523186AJun 4, 1996
Split and cover technique for phase shifting photolithography
IBM119 citations98
US5366757ANov 22, 1994
In situ resist control during spray and spin in vapor
IBM112 citations98
US5288569AFeb 22, 1994
Feature biassing and absorptive phase-shifting techniques to improve optical projection imaging
IBM65 citations96
US4902899AFeb 20, 1990
Lithographic process having improved image quality
IBM153 citations96
US4585342AApr 29, 1986
System for real-time monitoring the characteristics, variations and alignment errors of lithography structures
IBM95 citations96
US4142107AFeb 27, 1979
Resist development control system
IBM87 citations95
US5378511AJan 3, 1995
Material-saving resist spinner and process
IBM55 citations94
US4211834AJul 8, 1980
Method of using a o-quinone diazide sensitized phenol-formaldehyde resist as a deep ultraviolet light exposure mask
IBM55 citations94
US5403682AApr 4, 1995
Alternating rim phase-shifting mask
IBM24 citations92
US4737425AApr 12, 1988
Patterned resist and process
IBM129 citations91
US5449405ASep 12, 1995
Material-saving resist spinner and process
IBM32 citations90
US5272024ADec 21, 1993
Mask-structure and process to repair missing or unwanted phase-shifting elements
IBM19 citations82
US5446540AAug 29, 1995
Method of inspecting phase shift masks employing phase-error enhancing
IBM18 citations74
US4543319ASep 24, 1985
Polystyrene-tetrathiafulvalene polymers as deep-ultraviolet mask material
IBM14 citations68
TAIWAN SEMICONDUCTOR MFG
13 patentsUS6982135B2Jan 3, 2006
Pattern compensation for stitching
TAIWAN SEMICONDUCTOR MFG54 citations95
US7131102B2Oct 31, 2006
Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution era
TAIWAN SEMICONDUCTOR MFG15 citations92
US6711732B1Mar 23, 2004
Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution era
TAIWAN SEMICONDUCTOR MFG25 citations92
US7002165B2Feb 21, 2006
Apparatus and method for repairing resist latent images
TAIWAN SEMICONDUCTOR MFG8 citations74
US6934008B2Aug 23, 2005
Multiple mask step and scan aligner
TAIWAN SEMICONDUCTOR MFG6 citations74
US6777143B2Aug 17, 2004
Multiple mask step and scan aligner
TAIWAN SEMICONDUCTOR MFG7 citations74
US6998198B2Feb 14, 2006
Contact hole printing by packing and unpacking
TAIWAN SEMICONDUCTOR MFG6 citations63
US6897455B2May 24, 2005
Apparatus and method for repairing resist latent images
TAIWAN SEMICONDUCTOR MFG5 citations63
US6877152B2Apr 5, 2005
Method of inter-field critical dimension control
TAIWAN SEMICONDUCTOR MFG3 citations63
US6627358B1Sep 30, 2003
Mask repair in resist image
TAIWAN SEMICONDUCTOR MFG5 citations63
US7036108B2Apr 25, 2006
Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution era
TAIWAN SEMICONDUCTOR MFG1 citations62
US7013453B2Mar 14, 2006
Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution ERA
TAIWAN SEMICONDUCTOR MFG1 citations62
US7667821B2Feb 23, 2010
Multi-focus scanning with a tilted mask or wafer
TAIWAN SEMICONDUCTOR MFG0 citations52