Inventor

IZUMI KATSUTOSHI

JP18 patents

⚠️ This page may combine multiple inventors who share the name “IZUMI KATSUTOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IZUMI KATSUTOSHI

NIPPON TELEGRAPH & TELEPHONE

Method of manufacturing SOI semiconductor element

Semiconductor device having buried insulating layer

Method of making field-effect semiconductor device on sot

Method of making field-effect semiconductor device on SOI

Power semiconductor device

HOSIDEN CORP

Manufacturing apparatus for buried insulating layer-type semiconductor silicon carbide substrate

Method for manufacturing buried insulating layer type single crystal silicon carbide substrate

Manufacturing method for buried insulating layer-type semiconductor silicon carbide substrate

Manufacturing device for buried insulating layer type single crystal silicon carbide substrate

KOMATSU DENSHI KINZOKU KK

SOI substrate and method of producing the same

SOI substrate and method of producing the same

Method of making semiconductor device having SIMOX structure

OSAKA PREFECTURE

Single crystal silicon carbide thin film fabrication method and fabrication apparatus of the same

Etching method and etching apparatus of carbon thin film

Manufacturing method of monocrystalline gallium nitride localized substrate

IZUMI KATSUTOSHI

Method for producing single crystal SiC substrate and single crystal SiC substrate produced by the same

AIR WATER INC

Method for producing single crystal SiC substrate and single crystal SiC substrate produced by the same

KAWAMURA KEISUKE

Method for manufacturing nitrogen compound semiconductor substrate and nitrogen compound semiconductor substrate, and method for manufacturing single crystal SiC substrate and single crystal SiC substrate