Inventor
HUANG SHOU-WEI
TW29 patents
⚠️ This page may combine multiple inventors who share the name “HUANG SHOU-WEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
28 patentsUS6580630B1Jun 17, 2003
Initialization method of P-type silicon nitride read only memory
MACRONIX INT CO LTD151 citations99
US6613632B2Sep 2, 2003
Fabrication method for a silicon nitride read-only memory
MACRONIX INT CO LTD135 citations98
US6432778B1Aug 13, 2002
Method of forming a system on chip (SOC) with nitride read only memory (NROM)
MACRONIX INT CO LTD144 citations98
US6413815B1Jul 2, 2002
Method of forming a MIM capacitor
MACRONIX INT CO LTD61 citations96
US7088630B2Aug 8, 2006
Circuit and method for high speed sensing
MACRONIX INT CO LTD18 citations92
US6818956B2Nov 16, 2004
Non-volatile memory device and fabrication method thereof
MACRONIX INT CO LTD22 citations92
US6448126B1Sep 10, 2002
Method of forming an embedded memory
MACRONIX INT CO LTD29 citations92
US6448137B1Sep 10, 2002
Method of forming an NROM embedded with mixed-signal circuits
MACRONIX INT CO LTD25 citations92
US6440798B1Aug 27, 2002
Method of forming a mixed-signal circuit embedded NROM memory and MROM memory
MACRONIX INT CO LTD26 citations92
US6713315B2Mar 30, 2004
Mask read-only memory and fabrication thereof
MACRONIX INT CO LTD13 citations84
US6355539B1Mar 12, 2002
Method for forming shallow trench isolation
MACRONIX INT CO LTD14 citations84
US6551880B1Apr 22, 2003
Method of utilizing fabrication process of floating gate spacer to build twin-bit monos/sonos memory
MACRONIX INT CO LTD19 citations82
US6680227B2Jan 20, 2004
Non-volatile memory device and fabrication method thereof
MACRONIX INT CO LTD5 citations74
US6642113B1Nov 4, 2003
Non-volatile memory capable of preventing antenna effect and fabrication thereof
MACRONIX INT CO LTD7 citations74
US6627500B1Sep 30, 2003
Method of fabricating nitride read only memory
MACRONIX INT CO LTD7 citations74
US6812507B2Nov 2, 2004
Non-volatile memory capable of preventing antenna effect and fabrication thereof
MACRONIX INT CO LTD2 citations63
US6620694B1Sep 16, 2003
Method of making non volatile memory with a protective metal line
MACRONIX INT CO LTD3 citations63
US7608504B2Oct 27, 2009
Memory and manufacturing method thereof
MACRONIX INT CO LTD4 citations62
US6723603B2Apr 20, 2004
Method of utilizing fabrication process of poly-Si spacer to build flash memory with 2bit/cell
MACRONIX INT CO LTD4 citations61
US7307018B2Dec 11, 2007
Method of fabricating conductive lines
MACRONIX INT CO LTD4 citations60
US7254077B2Aug 7, 2007
Circuit and method for high speed sensing
MACRONIX INT CO LTD1 citations52
US6876044B2Apr 5, 2005
UV-programmable P-type mask ROM
MACRONIX INT CO LTD0 citations52
US6794701B2Sep 21, 2004
Non-volatile memory
MACRONIX INT CO LTD1 citations52
US6664164B2Dec 16, 2003
UV-programmed P-type Mask ROM and fabrication thereof
MACRONIX INT CO LTD1 citations52
US6444519B1Sep 3, 2002
Method for forming a capacitor in a mixed mode circuit device by ion implantation
MACRONIX INT CO LTD0 citations52
US7804122B2Sep 28, 2010
Non-volatile memory
MACRONIX INT CO LTD0 citations51
US7572691B2Aug 11, 2009
Non-volatile memory and method of fabricating the same
MACRONIX INT CO LTD1 citations51
US10103166B1Oct 16, 2018
Semiconductor device and critical dimension defining method thereof
MACRONIX INT CO LTD0 citations37