Inventor

MOENS PETER

BE64 patents

⚠️ This page may combine multiple inventors who share the name “MOENS PETER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MOENS PETER

SEMICONDUCTOR COMPONENTS IND LLC

Electronic device including a multiple channel HEMT and an insulated gate electrode

Electronic device including a multiple channel HEMT

Electronic device including a high electron mobility transistor including a gate electrode and a dielectric film

Electronic device including a polycrystalline compound semiconductor layer and a process of forming the same

Electronic device including a high electron mobility transistor that includes a barrier layer having different portions

Process of forming an electronic device including a transistor structure

Semiconductor structure including a doped buffer layer and a channel layer and a process of forming the same

III-V semiconductor device and method therefor

Ohmic contact structure for semiconductor device and method

Bidirectional HEMT and an electronic package including the bidirectional HEMT

Method of forming a high electron mobility semiconductor device and structure therefor

Enhancement mode MISHEMT with GaN channel regrowth under a gate area

Opto-electronic HEMT

Electronic device including a high electron mobility transistor including a gate electrode

Electronic device including a transistor with a non-uniform 2DEG

Electronic device including a transistor including III-V materials and a process of forming the same

Electronic device including a bidirectional HEMT

Semiconductor devices having super-junction trenches with conductive regions and method of making the same

Semiconductor wafer including a monocrystalline semiconductor layer spaced apart from a poly template layer

Monolithic semiconductor device assemblies

Monolithic semiconductor device assemblies

Electronic device including a high electron mobility transistor including a gate electrode and a gate interconnect and a method of using the same

Process of forming an electronic device including a transistor structure

Process of forming an electronic device including an access region

Method of forming a semiconductor device termination and structure therefor

Non-linear HEMT devices

HEMT devices with reduced size and high alignment tolerance

Electronic device including a transistor structure having different semiconductor base materials

Process of forming an electronic device including a multiple channel HEMT

Semiconductor component and method of manufacture

Semiconductor component and method of manufacture

Electronic device including high electron mobility transistors

Process of forming an electronic device including an access region

SEMICONDUCTOR COMPONENTS IND

Semiconductor device with improved breakdown properties and manufacturing method thereof

Process of forming a semiconductor wafer

Double trench for isolation of semiconductor devices

Double trench for isolation of semiconductor devices

Deep trench isolation for power semiconductors

Process of forming an electronic device having a termination region including an insulating region

HEMT semiconductor device and a process of forming the same

Semiconductor device having localized charge balance structure and method

Semiconductor device having localized charge balance structure and method

Hybrid ESD clamp

Electronic device having a termination region including an insulating region

Method of forming a high electron mobility semiconductor device and structure therefor

Alignment of trench for MOS

Semiconductor devices and method of making the same

MOENS PETER

Deep trench isolation structures in integrated semiconductor devices

AMI SEMICONDUCTOR BELGIUM BVBA

Alignment of trench for MOS

GUITART JAUME ROIG

Method of forming a semiconductor device termination and structure therefor