Inventor
CHENG YA-YUN
TW30 patents
⚠️ This page may combine multiple inventors who share the name “CHENG YA-YUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
21 patentsUS10804163B2Oct 13, 2020
Method of metal gate formation and structures formed by the same
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9953836B2Apr 24, 2018
Barrier layer above anti-punch through (APT) implant region to improve mobility of channel region of fin field effect transistor (FinFET) device structure
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11508627B2Nov 22, 2022
Method of metal gate formation and structures formed by the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10991800B2Apr 27, 2021
Method for FinFET LDD doping
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10396156B2Aug 27, 2019
Method for FinFET LDD doping
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US12068371B2Aug 20, 2024
Method for FinFET LDD doping
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12363908B2Jul 15, 2025
Semiconductor memory devices with varying channel width and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12363909B2Jul 15, 2025
Semiconductor memory devices and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12324194B2Jun 3, 2025
Source/drain engineering for ferroelectric field effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11908749B2Feb 20, 2024
Method of metal gate formation and structures formed by the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11856783B2Dec 26, 2023
Semiconductor memory devices with different thicknesses of word lines and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11758734B2Sep 12, 2023
Semiconductor memory devices and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11158508B2Oct 26, 2021
Barrier layer above anti-punch through (APT) implant region to improve mobility of channel region of fin field effect transistor (finFET) device structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12376309B2Jul 29, 2025
Ferroelectric memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12349363B2Jul 1, 2025
Ferroelectric device and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12170314B2Dec 17, 2024
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11916107B2Feb 27, 2024
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11557650B2Jan 17, 2023
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12048164B2Jul 23, 2024
Memory array and operation method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
USRE48304ENov 10, 2020
Source and drain dislocation fabrication in FinFETs
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12543322B2Feb 3, 2026
Ferroelectric memory device with carrier structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50