P

Inventor

CHENG YA-YUN

TW30 patents
⚠️ This page may combine multiple inventors who share the name “CHENG YA-YUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

21 patents
US10804163B2Oct 13, 2020

Method of metal gate formation and structures formed by the same

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9953836B2Apr 24, 2018

Barrier layer above anti-punch through (APT) implant region to improve mobility of channel region of fin field effect transistor (FinFET) device structure

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11508627B2Nov 22, 2022

Method of metal gate formation and structures formed by the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10991800B2Apr 27, 2021

Method for FinFET LDD doping

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10396156B2Aug 27, 2019

Method for FinFET LDD doping

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US12068371B2Aug 20, 2024

Method for FinFET LDD doping

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12363908B2Jul 15, 2025

Semiconductor memory devices with varying channel width and methods of manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12363909B2Jul 15, 2025

Semiconductor memory devices and methods of manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12324194B2Jun 3, 2025

Source/drain engineering for ferroelectric field effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11908749B2Feb 20, 2024

Method of metal gate formation and structures formed by the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11856783B2Dec 26, 2023

Semiconductor memory devices with different thicknesses of word lines and methods of manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11758734B2Sep 12, 2023

Semiconductor memory devices and methods of manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11158508B2Oct 26, 2021

Barrier layer above anti-punch through (APT) implant region to improve mobility of channel region of fin field effect transistor (finFET) device structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12376309B2Jul 29, 2025

Ferroelectric memory device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12349363B2Jul 1, 2025

Ferroelectric device and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12170314B2Dec 17, 2024

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11916107B2Feb 27, 2024

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11557650B2Jan 17, 2023

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12048164B2Jul 23, 2024

Memory array and operation method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
USRE48304ENov 10, 2020

Source and drain dislocation fabrication in FinFETs

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12543322B2Feb 3, 2026

Ferroelectric memory device with carrier structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50

TAIWAN SEMICONDUCTOR MFG

2 patents

CHENG UEI PREC IND CO LTD

1 patent

LIN NAN-CHUN

1 patent

VATE TECHNOLOGY CO LTD

1 patent

WANG CHUN-CHI

1 patent

YEN SHENG-YING

1 patent

MPI CORP

1 patent

KUO CHUNG-JUNG

1 patent