Inventor
OKUNO KOJI
JP45 patents
⚠️ This page may combine multiple inventors who share the name “OKUNO KOJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOYODA GOSEI KK
29 patentsUS9166102B2Oct 20, 2015
Group III nitride semiconductor light-emitting device including a superlatice layer
TOYODA GOSEI KK7 citations84
US8367445B2Feb 5, 2013
Group III nitride semiconductor light-emitting device
TOYODA GOSEI KK8 citations84
US7629619B2Dec 8, 2009
Group III nitride-based compound semiconductor light-emitting device and method for producing the same
TOYODA GOSEI KK8 citations83
US10700235B2Jun 30, 2020
Production method for group III nitride semiconductor
TOYODA GOSEI KK2 citations73
US9373750B2Jun 21, 2016
Group III nitride semiconductor light-emitting device
TOYODA GOSEI KK3 citations73
US9214339B2Dec 15, 2015
Method for producing group III nitride semiconductor
TOYODA GOSEI KK5 citations73
US11955581B2Apr 9, 2024
Group III nitride semiconductor device and production method therefor
TOYODA GOSEI KK0 citations62
US10439098B2Oct 8, 2019
Method for producing group III nitride semiconductor light-emitting device
TOYODA GOSEI KK1 citations62
US9209021B2Dec 8, 2015
Method for producing Group III nitride semiconductor and Group III nitride semiconductor
TOYODA GOSEI KK3 citations62
US12439735B2Oct 7, 2025
Semiconductor device and method for producing semiconductor device
TOYODA GOSEI KK0 citations61
US8816322B2Aug 26, 2014
Group III nitride semiconductor light-emitting device and production method therefor
TOYODA GOSEI KK2 citations60
US9202976B2Dec 1, 2015
Group III nitride semiconductor light-emitting device and method for producing the same
TOYODA GOSEI KK3 citations57
US10475952B2Nov 12, 2019
Group III nitride semiconductor light-emitting device
TOYODA GOSEI KK0 citations52
US10438793B2Oct 8, 2019
Production method for semiconductor structure and production method for semiconductor device
TOYODA GOSEI KK0 citations52
US10205053B2Feb 12, 2019
Semiconductor structure and semiconductor device
TOYODA GOSEI KK0 citations52
US9496453B2Nov 15, 2016
Method for producing group III nitride semiconductor light-emitting device
TOYODA GOSEI KK0 citations52
US9343619B2May 17, 2016
Group III nitride semiconductor light-emitting device and method for producing the same
TOYODA GOSEI KK1 citations52
US9190268B2Nov 17, 2015
Method for producing Ga-containing group III nitride semiconductor
TOYODA GOSEI KK1 citations52
US9029832B2May 12, 2015
Group III nitride semiconductor light-emitting device and method for producing the same
TOYODA GOSEI KK1 citations52
US8816354B2Aug 26, 2014
Group III nitride semiconductor light-emitting device and production method therefor
TOYODA GOSEI KK0 citations52
US7989238B2Aug 2, 2011
Group III nitride-based compound semiconductor light-emitting device and production method therefor
TOYODA GOSEI KK1 citations52
US9318559B2Apr 19, 2016
Method for producing group III nitride semiconductor and template substrate
TOYODA GOSEI KK0 citations50
US9196687B2Nov 24, 2015
Method for producing group III nitride semiconductor and template substrate
TOYODA GOSEI KK0 citations50
US10573515B2Feb 25, 2020
Production method for semiconductor
TOYODA GOSEI KK0 citations42
US10192809B2Jan 29, 2019
Semiconductor array and production method for micro device
TOYODA GOSEI KK0 citations42
US9755107B2Sep 5, 2017
Group III nitride semiconductor light-emitting device
TOYODA GOSEI KK0 citations42
US9406514B2Aug 2, 2016
Group III nitride semiconductor light-emitting device and production method therefor
TOYODA GOSEI KK0 citations42
US8956890B2Feb 17, 2015
Method for producing group III nitride semiconductor light-emitting device
TOYODA GOSEI KK0 citations42
US9837494B2Dec 5, 2017
Production method for group III nitride semiconductor and group III nitride semiconductor
TOYODA GOSEI KK0 citations41
OKUNO KOJI
6 patentsUS8258052B2Sep 4, 2012
Method of manufacturing silicon carbide semiconductor device
OKUNO KOJI8 citations83
US8518806B2Aug 27, 2013
Method for producing group III nitride-based compound semiconductor, wafer including group III nitride-based compound semiconductor, and group III nitrided-based compound semiconductor device
OKUNO KOJI15 citations81
US9054269B2Jun 9, 2015
Semiconductor light-emitting device
OKUNO KOJI6 citations72
US8465997B2Jun 18, 2013
Manufacturing method of group III nitride semiconductor
OKUNO KOJI3 citations62
US8420425B2Apr 16, 2013
Method for producing a group III nitride semiconductor light-emitting device
OKUNO KOJI4 citations62
US9064996B2Jun 23, 2015
Group III nitride-based compound semiconductor light-emitting device and production method therefor
OKUNO KOJI0 citations41
MITSUBISHI ELECTRIC CORP
5 patentsUS9324806B2Apr 26, 2016
Silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP2 citations61
US12501650B2Dec 16, 2025
Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP0 citations52
US10916666B2Feb 9, 2021
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations52
US9704947B2Jul 11, 2017
Semiconductor device and method for manufacturing same
MITSUBISHI ELECTRIC CORP0 citations52
US11125803B2Sep 21, 2021
Method of measuring semiconductor device by applying voltage to the semiconductor device using probe needle
MITSUBISHI ELECTRIC CORP0 citations49