Group III nitride-based compound semiconductor light-emitting device and production method therefor

Abstract

Provided is a Group III nitride-based compound semiconductor light-emitting device including aluminum regions. The Group III nitride-based compound semiconductor light-emitting device includes a sapphire substrate; aluminum regions which are formed on the substrate; an AlN buffer layer; an Si-doped GaN n-contact layer; an n-cladding layer formed of multiple layer units, each including an undoped In 0.1 Ga 0.9 N layer, an undoped GaN layer, and a silicon (Si)-doped GaN layer; an MQW light-emitting layer including alternately stacked eight well layers formed of In 0.2 Ga 0.8 N and eight barrier layers formed of GaN and Al 0.06 Ga 0.94 N; a p-cladding layer formed of multiple layers including a p-type Al 0.3 Ga 0.7 N layer and a p-type In 0.08 Ga 0.92 N layer; a p-contact layer having a layered structure including two p-type GaN layers having different magnesium concentrations; and an ITO light-transmitting electrode.

1. A method for producing a Group III nitride-based compound semiconductor light-emitting device, comprising:
 forming metallic aluminum regions on a substrate; 
 forming a Group III nitride-based compound semiconductor single-crystal layer, via a buffer layer, on a portion of the substrate on which no metallic aluminum regions are formed, so that the metallic aluminum regions are covered with the Group III nitride-based compound semiconductor single-crystal layer; and 
 stacking, on the Group III nitride-based compound semiconductor single-crystal layer, a Group III nitride-based compound semiconductor layer having a predetermined composition and containing an impurity of interest. 
 
     
     
       2. A method for producing a Group III nitride-based compound semiconductor light-emitting device according to  claim 1 , wherein dents are formed in the substrate, and the metallic aluminum regions are formed in the dents. 
     
     
       3. A method for producing a Group III nitride-based compound semiconductor light-emitting device according to  claim 2 , wherein the buffer layer is formed on the substrate before formation of the metallic aluminum regions. 
     
     
       4. A method for producing a Group III nitride-based compound semiconductor light-emitting device according to  claim 2 , wherein the buffer layer is formed after formation of the metallic aluminum regions on the substrate. 
     
     
       5. A method for producing a Group III nitride-based compound semiconductor light-emitting device according to  claim 1 , wherein the buffer layer is formed on the substrate before formation of the metallic aluminum regions. 
     
     
       6. A method for producing a Group III nitride-based compound semiconductor light-emitting device according to  claim 5 , wherein surface layers of the metallic aluminum regions are nitrided with ammonia before formation of the Group III nitride-based compound semiconductor single-crystal layer. 
     
     
       7. A method for producing a Group III nitride-based compound semiconductor light-emitting device according to  claim 1 , wherein the buffer layer is formed after formation of the metallic aluminum regions on the substrate.