Inventor · disambiguated record
Koji Okuno
Also filed as: OKUNO KOJI
45 granted patents·23 pending applications·121 citations·filing 2006–2025
97Inventor score
Top patents by PatentIndex Score
68 records- 0193US8586965B2Group III nitride semiconductor light-emitting deviceTOYODA YUSUKE·Filed 2012·Granted Nov 19, 2013·32 cites·20 claims
- 0291US9166102B2Group III nitride semiconductor light-emitting device including a superlatice layerTOYODA GOSEI KK·Filed 2013·Granted Oct 20, 2015·7 cites·9 claims
- 0388US9054269B2Semiconductor light-emitting deviceOKUNO KOJI·Filed 2011·Granted Jun 9, 2015·6 cites·20 claims
- 0487US10700235B2Production method for group III nitride semiconductorTOYODA GOSEI KK·Filed 2018·Granted Jun 30, 2020·2 cites·16 claims
- 0587US8367445B2Group III nitride semiconductor light-emitting deviceTOYODA GOSEI KK·Filed 2011·Granted Feb 5, 2013·8 cites·16 claims
- 0687US8258052B2Method of manufacturing silicon carbide semiconductor deviceOKUNO KOJI·Filed 2010·Granted Sep 4, 2012·8 cites·12 claims
- 0786US8518806B2Method for producing group III nitride-based compound semiconductor, wafer including group III nitride-based compound semiconductor, and group III nitrided-based compound semiconductor deviceOKUNO KOJI·Filed 2009·Granted Aug 27, 2013·15 cites·29 claims
- 0884US8420425B2Method for producing a group III nitride semiconductor light-emitting deviceOKUNO KOJI·Filed 2012·Granted Apr 16, 2013·4 cites·12 claims
- 0982US9214339B2Method for producing group III nitride semiconductorTOYODA GOSEI KK·Filed 2014·Granted Dec 15, 2015·5 cites·20 claims
- 1081US9373750B2Group III nitride semiconductor light-emitting deviceTOYODA GOSEI KK·Filed 2013·Granted Jun 21, 2016·3 cites·14 claims
- 1179US7629619B2Group III nitride-based compound semiconductor light-emitting device and method for producing the sameTOYODA GOSEI KK·Filed 2006·Granted Dec 8, 2009·8 cites·13 claims
- 1275US9209021B2Method for producing Group III nitride semiconductor and Group III nitride semiconductorTOYODA GOSEI KK·Filed 2014·Granted Dec 8, 2015·3 cites·20 claims
- 1374US8465997B2Manufacturing method of group III nitride semiconductorOKUNO KOJI·Filed 2010·Granted Jun 18, 2013·3 cites·17 claims
- 1474US2025151463A1Semiconductor light-emitting device including a plurality of columnar semiconductorsTOYODA GOSEI KK·Filed 2025·Application pending·0 cites
- 1573US10439098B2Method for producing group III nitride semiconductor light-emitting deviceTOYODA GOSEI KK·Filed 2018·Granted Oct 8, 2019·1 cites·16 claims
- 1673US9324806B2Silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Apr 26, 2016·2 cites·24 claims
- 1773US8816322B2Group III nitride semiconductor light-emitting device and production method thereforTOYODA GOSEI KK·Filed 2012·Granted Aug 26, 2014·2 cites·7 claims
- 1871US9029832B2Group III nitride semiconductor light-emitting device and method for producing the sameTOYODA GOSEI KK·Filed 2013·Granted May 12, 2015·1 cites·16 claims
- 1970US9343619B2Group III nitride semiconductor light-emitting device and method for producing the sameTOYODA GOSEI KK·Filed 2014·Granted May 17, 2016·1 cites·14 claims
- 2070US9202976B2Group III nitride semiconductor light-emitting device and method for producing the sameTOYODA GOSEI KK·Filed 2014·Granted Dec 1, 2015·3 cites·17 claims
- 2170US2025268000A1Light emitting elementTOYODA GOSEI KK·Filed 2025·Application pending·0 cites
- 2269US8680581B2Method for producing group III nitride semiconductor and template substrateNAKADA NAOYUKI·Filed 2009·Granted Mar 25, 2014·3 cites·34 claims
- 2366US2025048798A1Light emitting elementTOYODA GOSEI KK·Filed 2024·Application pending·0 cites
- 2466US2024313034A1Light emitting element and production method thereforTOYODA GOSEI KK·Filed 2024·Application pending·0 cites
- 2565US2024194821A1Light emitting elementTOYODA GOSEI KK·Filed 2023·Application pending·0 cites
- 2664US9263258B2Method for producing group III nitride-based compound semiconductor, wafer, and group III nitride-based compound semiconductor deviceNAGAI SEIJI·Filed 2009·Granted Feb 16, 2016·2 cites·20 claims
- 2764US7989238B2Group III nitride-based compound semiconductor light-emitting device and production method thereforTOYODA GOSEI KK·Filed 2009·Granted Aug 2, 2011·1 cites·7 claims
- 2864US2025107283A1Light emitting elementTOYODA GOSEI KK·Filed 2024·Application pending·0 cites
- 2964US2024421259A1Light emitting deviceTOYODA GOSEI KK·Filed 2024·Application pending·0 cites
- 3063US12439735B2Semiconductor device and method for producing semiconductor deviceTOYODA GOSEI KK·Filed 2022·Granted Oct 7, 2025·0 cites·8 claims
- 3163US11955581B2Group III nitride semiconductor device and production method thereforTOYODA GOSEI KK·Filed 2021·Granted Apr 9, 2024·0 cites·15 claims
- 3263US9190268B2Method for producing Ga-containing group III nitride semiconductorTOYODA GOSEI KK·Filed 2013·Granted Nov 17, 2015·1 cites·11 claims
- 3362US2024313033A1Light emitting element and method for producing light emitting elementTOYODA GOSEI KK·Filed 2024·Application pending·0 cites
- 3462US2024313161A1Light emitting element and production method thereforTOYODA GOSEI KK·Filed 2024·Application pending·0 cites
- 3562US2025122643A1Method for producing group iii nitride semiconductorTOYODA GOSEI KK·Filed 2024·Application pending·0 cites
- 3662US2022285580A1Semiconductor Light-Emitting DeviceTOYTODA GOSEI CO LTD·Filed 2022·Application pending·0 cites
- 3761US2025126900A1Optical device and production method thereforTOYODA GOSEI KK·Filed 2024·Application pending·0 cites
- 3861US2022310874A1Group iii nitride semiconductor device and method for producing sameTOYODA GOSEI KK·Filed 2022·Application pending·0 cites
- 3961US2024313147A1Light emitting element and production method thereforTOYODA GOSEI KK·Filed 2024·Application pending·0 cites
- 4059US2023395750A1Light emitting elementTOYODA GOSEI KK·Filed 2023·Application pending·0 cites
- 4156US9196687B2Method for producing group III nitride semiconductor and template substrateTOYODA GOSEI KK·Filed 2014·Granted Nov 24, 2015·0 cites·8 claims
- 4256US2023352573A1Semiconductor element and deviceTOYODA GOSEI KK·Filed 2023·Application pending·0 cites
- 4355US2025248172A1Group iii nitride semiconductor and production method thereforTOYODA GOSEI KK·Filed 2025·Application pending·0 cites
- 4454US12501650B2Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2022·Granted Dec 16, 2025·0 cites·17 claims
- 4554US8816354B2Group III nitride semiconductor light-emitting device and production method thereforTOYODA GOSEI KK·Filed 2013·Granted Aug 26, 2014·0 cites·20 claims
- 4654US2022246789A1Semiconductor device and method for producing semiconductor deviceTOYODA GOSEI KK·Filed 2022·Application pending·0 cites
- 4753US10205053B2Semiconductor structure and semiconductor deviceTOYODA GOSEI KK·Filed 2017·Granted Feb 12, 2019·0 cites·20 claims
- 4853US9318559B2Method for producing group III nitride semiconductor and template substrateTOYODA GOSEI KK·Filed 2015·Granted Apr 19, 2016·0 cites·6 claims
- 4953US8956890B2Method for producing group III nitride semiconductor light-emitting deviceTOYODA GOSEI KK·Filed 2013·Granted Feb 17, 2015·0 cites·20 claims
- 5053US2011240957A1Group lll nitride semiconductor light-emitting deviceTOYODA GOSEI KK·Filed 2011·Application pending·0 cites
Showing the top 50 of 68 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →