Inventor
LIN CHAO HUNG
TW60 patents
⚠️ This page may combine multiple inventors who share the name “LIN CHAO HUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
37 patentsUS9530778B1Dec 27, 2016
Semiconductor devices having metal gate and method for manufacturing semiconductor devices having metal gate
UNITED MICROELECTRONICS CORP40 citations94
US9349833B1May 24, 2016
Semiconductor device and method of forming the same
UNITED MICROELECTRONICS CORP32 citations94
US9142641B1Sep 22, 2015
Method for manufacturing finFET
UNITED MICROELECTRONICS CORP21 citations93
US9905464B2Feb 27, 2018
Semiconductor device and method of forming the same
UNITED MICROELECTRONICS CORP9 citations84
US9704737B2Jul 11, 2017
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP10 citations84
US9589966B2Mar 7, 2017
Static random access memory
UNITED MICROELECTRONICS CORP9 citations84
US9559164B2Jan 31, 2017
Nanowire transistor device and method for manufacturing nanowire transistor device
UNITED MICROELECTRONICS CORP9 citations84
US9502410B1Nov 22, 2016
Semiconductor structure and manufacturing method thereof
UNITED MICROELECTRONICS CORP13 citations84
US9484263B1Nov 1, 2016
Method of removing a hard mask on a gate
UNITED MICROELECTRONICS CORP8 citations84
US9455194B1Sep 27, 2016
Method for fabricating semiconductor device
UNITED MICROELECTRONICS CORP7 citations84
US9947792B2Apr 17, 2018
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP3 citations73
US9916978B2Mar 13, 2018
Method for fabricating a Fin field effect transistor (FinFET)
UNITED MICROELECTRONICS CORP5 citations73
US9881831B2Jan 30, 2018
Method for fabricating semiconductor device including fin shaped structure
UNITED MICROELECTRONICS CORP2 citations73
US9847402B2Dec 19, 2017
Method of using polysilicon as stop layer in a replacement metal gate process
UNITED MICROELECTRONICS CORP2 citations73
US9786662B1Oct 10, 2017
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP2 citations73
US9773887B2Sep 26, 2017
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP3 citations73
US9722078B2Aug 1, 2017
Semiconductor device including fin shaped structure and method for fabricating the same
UNITED MICROELECTRONICS CORP2 citations73
US9659873B2May 23, 2017
Semiconductor structure with aligning mark and method of forming the same
UNITED MICROELECTRONICS CORP2 citations73
US9653290B2May 16, 2017
Method for manufacturing nanowire transistor device
UNITED MICROELECTRONICS CORP3 citations73
US9384978B1Jul 5, 2016
Method of forming trenches
UNITED MICROELECTRONICS CORP3 citations73
US11387148B2Jul 12, 2022
Semiconductor device
UNITED MICROELECTRONICS CORP0 citations62
US10692777B2Jun 23, 2020
Semiconductor device
UNITED MICROELECTRONICS CORP0 citations52
US10497810B2Dec 3, 2019
Method for fabricating semiconductor device
UNITED MICROELECTRONICS CORP0 citations52
US10319641B2Jun 11, 2019
Semiconductor device having gate structure
UNITED MICROELECTRONICS CORP0 citations52
US10256146B2Apr 9, 2019
Method of forming semiconductor device
UNITED MICROELECTRONICS CORP0 citations52
US10236383B2Mar 19, 2019
Method for fabricating semiconductor device
UNITED MICROELECTRONICS CORP0 citations52
US10103062B2Oct 16, 2018
Method for fabricating semiconductor device having gate structure
UNITED MICROELECTRONICS CORP0 citations52
US10068808B2Sep 4, 2018
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations52
US9960123B2May 1, 2018
Method of forming semiconductor structure with aligning mark in dicing region
UNITED MICROELECTRONICS CORP1 citations52
US9954108B2Apr 24, 2018
Semiconductor device including fin shaped structure including silicon germanium layer
UNITED MICROELECTRONICS CORP0 citations52
US9859148B2Jan 2, 2018
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations52
US9831133B2Nov 28, 2017
Semiconductor devices having metal gate and method for manufacturing semiconductor devices having metal gate
UNITED MICROELECTRONICS CORP1 citations52
US9761692B1Sep 12, 2017
Method of using polysilicon as stop layer in a replacement metal gate process
UNITED MICROELECTRONICS CORP0 citations52
US9583394B2Feb 28, 2017
Manufacturing method of semiconductor structure
UNITED MICROELECTRONICS CORP1 citations52
US9553026B1Jan 24, 2017
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations52
US9502252B2Nov 22, 2016
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations52
US9349653B2May 24, 2016
Manufacturing method of semiconductor structure for preventing surface of fin structure from damage and providing improved process window
UNITED MICROELECTRONICS CORP0 citations52
OMNIVISION TECH INC
4 patentsUS9608023B1Mar 28, 2017
Edge reflection reduction
OMNIVISION TECH INC3 citations73
US10211243B2Feb 19, 2019
Edge reflection reduction
OMNIVISION TECH INC0 citations52
US10147751B2Dec 4, 2018
Edge reflection reduction
OMNIVISION TECH INC0 citations52
US9966404B2May 8, 2018
Edge reflection reduction
OMNIVISION TECH INC0 citations52
LIN CHAO-HUNG
2 patentsQUANTA COMP INC
2 patentsLIU TSUNG-CHIN
1 patent(unassigned)
1 patentHTC CORP
1 patentGM GLOBAL TECH OPERATIONS LLC
1 patentOPTRONICS TECHNOLOGY INC A
1 patentShowing the top 50 of 60 patents by PatentIndex Score.