Inventor
IWAYA MASANOBU
JP19 patents
⚠️ This page may combine multiple inventors who share the name “IWAYA MASANOBU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJI ELECTRIC CO LTD
18 patentsUS9685333B2Jun 20, 2017
Manufacturing method of silicon carbide semiconductor device
FUJI ELECTRIC CO LTD7 citations83
US9997358B2Jun 12, 2018
Silicon carbide semiconductor device having stacked epitaxial layers
FUJI ELECTRIC CO LTD7 citations82
US10079298B2Sep 18, 2018
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD4 citations72
US10586703B2Mar 10, 2020
Method of manufacturing silicon carbide semiconductor device
FUJI ELECTRIC CO LTD2 citations71
US10367092B2Jul 30, 2019
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
FUJI ELECTRIC CO LTD6 citations71
US12389639B2Aug 12, 2025
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations62
US11855134B2Dec 26, 2023
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations62
US10276653B2Apr 30, 2019
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD1 citations62
US10832914B2Nov 10, 2020
Method of manufacturing silicon carbide semiconductor device
FUJI ELECTRIC CO LTD1 citations61
US10403713B2Sep 3, 2019
Method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations52
US10840326B2Nov 17, 2020
Power semiconductor device using wide bandgap semiconductor material and method of manufacturing power semiconductor device using wide bandgap semiconductor material
FUJI ELECTRIC CO LTD0 citations51
US10103259B2Oct 16, 2018
Method of manufacturing a wide bandgap vertical-type MOSFET
FUJI ELECTRIC CO LTD0 citations51
US9911846B2Mar 6, 2018
Semiconductor device having a bandgap wider than that of silicon
FUJI ELECTRIC CO LTD0 citations51
US9887270B2Feb 6, 2018
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
FUJI ELECTRIC CO LTD1 citations51
US11063123B2Jul 13, 2021
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
FUJI ELECTRIC CO LTD0 citations49
US12255228B2Mar 18, 2025
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
FUJI ELECTRIC CO LTD0 citations47
US10756200B2Aug 25, 2020
Silicon carbide semiconductor element and method of manufacturing silicon carbide semiconductor
FUJI ELECTRIC CO LTD0 citations41
US10453954B2Oct 22, 2019
Semiconductor device having trenches in termination structure region thereof and method for manufacturing the same
FUJI ELECTRIC CO LTD0 citations41