Inventor

LIM BONG-SOON

KR42 patents

⚠️ This page may combine multiple inventors who share the name “LIM BONG-SOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIM BONG-SOON

SAMSUNG ELECTRONICS CO LTD

Nonvolatile memory device having a vertical structure and a memory system including the same

Nonvolatile memory device

Memory device, memory system, and power management method

Nonvolatile memory device having a vertical structure and a memory system including the same

Nonvolatile memory device having a vertical structure and a memory system including the same

Nonvolatile memory device, vertical NAND flash memory device and SSD device including the same

Nonvolatile memory device and method of manufacturing the same

Non-volatile memory device and memory system including the same

Nonvolatile memory device and method of performing an erase operation in the same

Nonvolatile memory device

Nonvolatile memory device compensating for voltage drop of target gate line

Nonvolatile memory device

View port of a chemical vapor deposition device for manufacturing semiconductor devices

Semiconductor device

Semiconductor device

Non-volatile memory devices having enhanced erase control circuits therein

Nonvolatile memory device storing data in sub-blocks and operating method thereof

Nonvolatile memory device with capability of determing degradation of data erase characteristics

Non-volatile memory device reducing data programming and verification time, and method of driving the same

Erase method of non-volatile memory device

Nonvolatile memory device and erase method thereof

Nonvolatile memory device having a vertical structure and a memory system including the same

Semiconductor device

Non-volatile memory

Semiconductor memory device including capacitor

Non-volatile memory

Non-volatile memory

Nonvolatile memory device and method of operating the same

Nonvolatile memory device with capability of determining degradation of data erase characteristics

Method of erasing data in nonvolatile memory device by changing level of voltage and duration of time to apply the voltage for target erase block

Vertical memory device including substrate control circuit and memory system including the same

Non-volatile memory device and operating method thereof

Nonvolatile memory device with intermediate switching transistors and programming method

Semiconductor memory device including capacitor

Nonvolatile memory device with intermediate switching transistors and programming method

Nonvolatile memory device and memory system including the same

LIM BONG SOON

Memory device having vertical structure and memory system including the same

Operating method of non-volatile memory device

HWANG CHUL-JIN

Non-volatile memory device

NAM SANG-WAN

Nonvolatile memory device and worldline driving method thereof

HYOSUNG ELECTRONICS CO LTD

Connector for use in a card reader

KIM TAE-HYUN

Non-volatile memory device and memory system including the same