Inventor
PARK KWANGMIN
KR31 patents
⚠️ This page may combine multiple inventors who share the name “PARK KWANGMIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
23 patentsUS8872256B2Oct 28, 2014
Three-dimensional semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD29 citations91
US9768266B2Sep 19, 2017
Three-dimensional semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations83
US9564499B2Feb 7, 2017
Three-dimensional semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations82
US11444127B2Sep 13, 2022
Memory devices
SAMSUNG ELECTRONICS CO LTD2 citations73
US10903327B2Jan 26, 2021
Three-dimensional semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US11818899B2Nov 14, 2023
Semiconductor device including layers with different chalcogen compounds and semiconductor apparatus including the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US11094745B2Aug 17, 2021
Variable resistance memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations71
US9202819B2Dec 1, 2015
Three-dimensional semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations71
US11581367B2Feb 14, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations70
US11574956B2Feb 7, 2023
Semiconductor device including data storage material pattern
SAMSUNG ELECTRONICS CO LTD2 citations68
US11888042B2Jan 30, 2024
Three-dimensional semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11588032B2Feb 21, 2023
Three-dimensional semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12101942B2Sep 24, 2024
Semiconductor device including chalcogen compound and semiconductor apparatus including the same
SAMSUNG ELECTRONICS CO LTD1 citations60
US11856872B2Dec 26, 2023
Variable resistance memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations60
US11411179B2Aug 9, 2022
Variable resistance memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US11616197B2Mar 28, 2023
Variable resistance memory device
SAMSUNG ELECTRONICS CO LTD1 citations59
US11482670B2Oct 25, 2022
Method of fabricating a variable resistance memory device
SAMSUNG ELECTRONICS CO LTD0 citations57
US11821871B2Nov 21, 2023
Gas sensor, sensor array module and mobile device including the same
SAMSUNG ELECTRONICS CO LTD0 citations54
US11672130B2Jun 6, 2023
Semiconductor device and method of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations50
USRE46389EMay 2, 2017
Nonvolatile memory device and method of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations49
US11387410B2Jul 12, 2022
Semiconductor device including data storage material pattern
SAMSUNG ELECTRONICS CO LTD0 citations48
US11063218B2Jul 13, 2021
Method of fabricating semiconductor devices using a two-step gap-fill process
SAMSUNG ELECTRONICS CO LTD0 citations47
US10720470B2Jul 21, 2020
Variable resistance memory devices
SAMSUNG ELECTRONICS CO LTD0 citations40
PARK KWANGMIN
3 patentsUS9437607B2Sep 6, 2016
Semiconductor device and method of manufacturing the same
PARK KWANGMIN8 citations79
US8431984B2Apr 30, 2013
Nonvolatile memory devices including deep and high density trapping layers
PARK KWANGMIN5 citations70
US8426907B2Apr 23, 2013
Nonvolatile memory devices including multiple charge trapping layers
PARK KWANGMIN1 citations49