P

Inventor

PARK KWANGMIN

KR31 patents
⚠️ This page may combine multiple inventors who share the name “PARK KWANGMIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

23 patents
US8872256B2Oct 28, 2014

Three-dimensional semiconductor memory devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD29 citations91
US9768266B2Sep 19, 2017

Three-dimensional semiconductor memory devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations83
US9564499B2Feb 7, 2017

Three-dimensional semiconductor memory devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations82
US11444127B2Sep 13, 2022

Memory devices

SAMSUNG ELECTRONICS CO LTD2 citations73
US10903327B2Jan 26, 2021

Three-dimensional semiconductor memory devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US11818899B2Nov 14, 2023

Semiconductor device including layers with different chalcogen compounds and semiconductor apparatus including the same

SAMSUNG ELECTRONICS CO LTD2 citations71
US11094745B2Aug 17, 2021

Variable resistance memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations71
US9202819B2Dec 1, 2015

Three-dimensional semiconductor memory devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations71
US11581367B2Feb 14, 2023

Semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations70
US11574956B2Feb 7, 2023

Semiconductor device including data storage material pattern

SAMSUNG ELECTRONICS CO LTD2 citations68
US11888042B2Jan 30, 2024

Three-dimensional semiconductor memory devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11588032B2Feb 21, 2023

Three-dimensional semiconductor memory devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US12101942B2Sep 24, 2024

Semiconductor device including chalcogen compound and semiconductor apparatus including the same

SAMSUNG ELECTRONICS CO LTD1 citations60
US11856872B2Dec 26, 2023

Variable resistance memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations60
US11411179B2Aug 9, 2022

Variable resistance memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations60
US11616197B2Mar 28, 2023

Variable resistance memory device

SAMSUNG ELECTRONICS CO LTD1 citations59
US11482670B2Oct 25, 2022

Method of fabricating a variable resistance memory device

SAMSUNG ELECTRONICS CO LTD0 citations57
US11821871B2Nov 21, 2023

Gas sensor, sensor array module and mobile device including the same

SAMSUNG ELECTRONICS CO LTD0 citations54
US11672130B2Jun 6, 2023

Semiconductor device and method of forming the same

SAMSUNG ELECTRONICS CO LTD0 citations50
USRE46389EMay 2, 2017

Nonvolatile memory device and method of forming the same

SAMSUNG ELECTRONICS CO LTD0 citations49
US11387410B2Jul 12, 2022

Semiconductor device including data storage material pattern

SAMSUNG ELECTRONICS CO LTD0 citations48
US11063218B2Jul 13, 2021

Method of fabricating semiconductor devices using a two-step gap-fill process

SAMSUNG ELECTRONICS CO LTD0 citations47
US10720470B2Jul 21, 2020

Variable resistance memory devices

SAMSUNG ELECTRONICS CO LTD0 citations40

PARK KWANGMIN

3 patents

SEOL KWANG SOO

1 patent

YON GUKHYON

1 patent

NOH YOUNG-JIN

1 patent

YUN JUMI

1 patent

LIM JUWAN

1 patent