Inventor
ATWOOD GREGORY E
US31 patents
⚠️ This page may combine multiple inventors who share the name “ATWOOD GREGORY E”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
30 patentsUS5892710AApr 6, 1999
Method and circuitry for storing discrete amounts of charge in a single memory element
INTEL CORP170 citations99
US5781473AJul 14, 1998
Variable stage charge pump
INTEL CORP114 citations99
US5767735AJun 16, 1998
Variable stage charge pump
INTEL CORP162 citations99
US5602794AFeb 11, 1997
Variable stage charge pump
INTEL CORP123 citations99
US5566125AOct 15, 1996
Method and circuitry for storing discrete amounts of charge in a single memory element
INTEL CORP159 citations99
US5508958AApr 16, 1996
Method and apparatus for sensing the state of floating gate memory cells by applying a variable gate voltage
INTEL CORP266 citations99
US5440505AAug 8, 1995
Method and circuitry for storing discrete amounts of charge in a single memory element
INTEL CORP275 citations99
US5546042AAug 13, 1996
High precision voltage regulation circuit for programming multiple bit flash memory
INTEL CORP152 citations98
US5497119AMar 5, 1996
High precision voltage regulation circuit for programming multilevel flash memory
INTEL CORP283 citations98
US5487033AJan 23, 1996
Structure and method for low current programming of flash EEPROMS
INTEL CORP162 citations98
US5239505AAug 24, 1993
Floating gate non-volatile memory with blocks and memory refresh
INTEL CORP150 citations98
US5237535AAug 17, 1993
Method of repairing overerased cells in a flash memory
INTEL CORP178 citations98
US5731242AMar 24, 1998
Self-aligned contact process in semiconductor fabrication
INTEL CORP147 citations97
US5677869AOct 14, 1997
Programming flash memory using strict ordering of states
INTEL CORP131 citations97
US5386388AJan 31, 1995
Single cell reference scheme for flash memory sensing and program state verification
INTEL CORP147 citations97
US5763912AJun 9, 1998
Depletion and enhancement MOSFETs with electrically trimmable threshold voltages
INTEL CORP71 citations96
US5732039AMar 24, 1998
Variable stage charge pump
INTEL CORP90 citations96
US5553020ASep 3, 1996
Structure and method for low current programming of flash EEPROMs
INTEL CORP93 citations96
US5065364ANov 12, 1991
Apparatus for providing block erasing in a flash EPROM
INTEL CORP221 citations96
US6194784B1Feb 27, 2001
Self-aligned contact process in semiconductor fabrication and device therefrom
INTEL CORP53 citations95
US5245570ASep 14, 1993
Floating gate non-volatile memory blocks and select transistors
INTEL CORP77 citations95
US5190887AMar 2, 1993
Method of making electrically erasable and electrically programmable memory cell with extended cycling endurance
INTEL CORP66 citations95
US5737265AApr 7, 1998
Programming flash memory using data stream analysis
INTEL CORP26 citations93
US5729489AMar 17, 1998
Programming flash memory using predictive learning methods
INTEL CORP88 citations93
US5701266ADec 23, 1997
Programming flash memory using distributed learning methods
INTEL CORP37 citations92
US5402370AMar 28, 1995
Circuitry and method for selecting a drain programming voltage for a nonvolatile memory
INTEL CORP28 citations92
US5390146AFeb 14, 1995
Reference switching circuit for flash EPROM
INTEL CORP27 citations92
US5233562AAug 3, 1993
Methods of repairing field-effect memory cells in an electrically erasable and electrically programmable memory device
INTEL CORP45 citations92
US4992980AFeb 12, 1991
Novel architecture for virtual ground high-density EPROMS
INTEL CORP23 citations88
US6091618AJul 18, 2000
Method and circuitry for storing discrete amounts of charge in a single memory element
INTEL CORP10 citations74