Inventor

AHN JONG-HYON

KR33 patents

⚠️ This page may combine multiple inventors who share the name “AHN JONG-HYON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

AHN JONG-HYON

SAMSUNG ELECTRONICS CO LTD

Method of making a fuse in a semiconductor device

Method of making a fuse in a semiconductor device and a semiconductor device having a fuse

Method of making a fuse in a semiconductor device and a semiconductor device having a fuse

Method of fabricating multi-gate transistor and multi-gate transistor fabricated thereby

Metal interconnect layer of semiconductor device and method for forming a metal interconnect layer

Semiconductor device having metal-insulator-metal capacitor and fabrication method thereof

Structure of semiconductor device and method for manufacturing the same

Methods of fabricating integrated circuit bonding pads including intermediate closed conductive layers having spaced apart insulating islands therein

Integrated circuit bonding pads including intermediate closed conductive layers having spaced apart insulating islands therein

Method of forming a metal gate in a semiconductor device

Integrated circuit bonding pads including conductive layers with arrays of unaligned spaced apart insulating islands therein and methods of forming same

Asymmetrical SRAM device and method of manufacturing the same

Method of manufacturing a semiconductor device having a gate structure with low parasitic capacitance

Manufacturing method of semiconductor device

Flip chip type semiconductor device and method of fabricating the same

Semiconductor device having stress reducing laminate and method for manufacturing the same

Method for manufacturing semiconductor substrate having buck transistor and SOI transistor areas

MOSFET and method of fabricating the same

Structure of semiconductor device and method for manufacturing the same

Overlay mark for measuring and correcting alignment errors

Semiconductor device having stress reducing laminate and method for manufacturing the same

Semiconductor device fabricating method

Semiconductor device having a fuse

Method of fabricating a MOSFET having doped epitaxially grown source/drain region on recessed substrate

Non-volatile memory device and methods of manufacturing and operating the same

Method of manufacturing a semiconductor device having a gate structure with low parasitic capacitance

Trench isolation type semiconductor device which prevents a recess from being formed in a field region

Nonvolatile memory device, method of fabricating and method of operating the same

Method for manufacturing semiconductor device

Trench isolation type semiconductor device which prevents a recess from being formed in a field region and method of fabricating the same

Semiconductor integrated circuit device and method of manufacturing the same

Semiconductor devices and methods of fabricating the same

SAMSUNG ELECTRONCIS CO LTD

Trench isolation type semiconductor device and related method of manufacture