Inventor
HURKX GODEFRIDUS A M
NL22 patents
⚠️ This page may combine multiple inventors who share the name “HURKX GODEFRIDUS A M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KONINKL PHILIPS ELECTRONICS NV
10 patentsUS6541817B1Apr 1, 2003
Trench-gate semiconductor devices and their manufacture
KONINKL PHILIPS ELECTRONICS NV73 citations96
US6462377B2Oct 8, 2002
Insulated gate field effect device
KONINKL PHILIPS ELECTRONICS NV66 citations96
US6436779B2Aug 20, 2002
Semiconductor device having a plurality of resistive paths
KONINKL PHILIPS ELECTRONICS NV75 citations96
US6624472B2Sep 23, 2003
Semiconductor device with voltage sustaining zone
KONINKL PHILIPS ELECTRONICS NV37 citations92
US6605862B2Aug 12, 2003
Trench semiconductor devices
KONINKL PHILIPS ELECTRONICS NV35 citations91
US6459133B1Oct 1, 2002
Enhanced flux semiconductor device with mesa and method of manufacturing same
KONINKL PHILIPS ELECTRONICS NV24 citations91
US6724021B2Apr 20, 2004
Semiconductor devices and their peripheral termination
KONINKL PHILIPS ELECTRONICS NV14 citations82
US6436785B2Aug 20, 2002
Method of manufacturing semiconductor device with a tunnel diode
KONINKL PHILIPS ELECTRONICS NV2 citations62
US6417526B2Jul 9, 2002
Semiconductor device having a rectifying junction and method of manufacturing same
KONINKL PHILIPS ELECTRONICS NV4 citations58
US6930011B2Aug 16, 2005
Semiconductor device with a bipolar transistor, and method of manufacturing such a device
KONINKL PHILIPS ELECTRONICS NV1 citations48
PHILIPS CORP
7 patentsUS6242762B1Jun 5, 2001
Semiconductor device with a tunnel diode and method of manufacturing same
PHILIPS CORP77 citations95
US6331467B1Dec 18, 2001
Method of manufacturing a trench gate field effect semiconductor device
PHILIPS CORP52 citations92
US5760450AJun 2, 1998
Semiconductor resistor using back-to-back zener diodes
PHILIPS CORP16 citations73
US5874771AFeb 23, 1999
Punch-through resistor
PHILIPS CORP5 citations59
US6355971B2Mar 12, 2002
Semiconductor switch devices having a region with three distinct zones and their manufacture
PHILIPS CORP3 citations58
US6252282B1Jun 26, 2001
Semiconductor device with a bipolar transistor, and method of manufacturing such a device
PHILIPS CORP3 citations58
US5694071ADec 2, 1997
Electronic device comprising means for compensating an undesired capacitance
PHILIPS CORP2 citations57
NXP BV
4 patentsUS7839209B2Nov 23, 2010
Tunnel field effect transistor
NXP BV12 citations84
US7709923B2May 4, 2010
Metal-base nanowire transistor
NXP BV8 citations83
US7660180B2Feb 9, 2010
Dielectric antifuse for electro-thermally programmable device
NXP BV7 citations72
US8362821B2Jan 29, 2013
Charge carrier stream generating electronic device and method
NXP BV0 citations52