Inventor
REIMER BERTHOLD
DE15 patents
⚠️ This page may combine multiple inventors who share the name “REIMER BERTHOLD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
7 patentsUS10559593B1Feb 11, 2020
Field-effect transistors with a grown silicon-germanium channel
GLOBALFOUNDRIES INC11 citations77
US9842762B1Dec 12, 2017
Method of manufacturing a semiconductor wafer having an SOI configuration
GLOBALFOUNDRIES INC2 citations70
US8815674B1Aug 26, 2014
Methods of forming a semiconductor device by performing a wet acid etching process while preventing or reducing loss of active area and/or isolation regions
GLOBALFOUNDRIES INC5 citations70
US9054041B2Jun 9, 2015
Methods for etching dielectric materials in the fabrication of integrated circuits
GLOBALFOUNDRIES INC2 citations60
US8048748B2Nov 1, 2011
Reducing contamination in a process flow of forming a channel semiconductor alloy in a semiconductor device
GLOBALFOUNDRIES INC2 citations60
US8716136B1May 6, 2014
Method of forming a semiconductor structure including a wet etch process for removing silicon nitride
GLOBALFOUNDRIES INC0 citations50
US8357575B2Jan 22, 2013
Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers
GLOBALFOUNDRIES INC0 citations50
BEYER SVEN
3 patentsUS8283232B2Oct 9, 2012
Enhanced etch stop capability during patterning of silicon nitride including layer stacks by providing a chemically formed oxide layer during semiconductor processing
BEYER SVEN7 citations83
US8951901B2Feb 10, 2015
Superior integrity of a high-K gate stack by forming a controlled undercut on the basis of a wet chemistry
BEYER SVEN2 citations61
US8524591B2Sep 3, 2013
Maintaining integrity of a high-K gate stack by passivation using an oxygen plasma
BEYER SVEN3 citations59