Inventor

CHANG HUICHENG

TW216 patents

⚠️ This page may combine multiple inventors who share the name “CHANG HUICHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHANG HUICHENG

TAIWAN SEMICONDUCTOR MFG CO LTD

Field effect transistor contact with reduced contact resistance using implantation process

Enhanced channel strain to reduce contact resistance in NMOS FET devices

Semiconductor device having a contact plug with an air gap spacer

Gate spacer structure and method of forming same

Gate spacer structure and method of forming same

Source/drain structure

Enhanced channel strain to reduce contact resistance in NMOS FET devices

Integrating junction formation of transistors with contact formation

finFET device and methods of forming

Enhanced channel strain to reduce contact resistance in NMOS FET devices

Field effect transistor contact with reduced contact resistance

Semiconductor device and methods of forming the same

Method of forming a semiconductor device by high-pressure anneal and post-anneal treatment

Semiconductor structure with doped via plug and method for forming the same

Wafer positioning method and apparatus

Laser de-bonding carriers and composite carriers thereof

Ion implantation for nano-FET

Sacrificial layer for semiconductor process

Method for patterning a lanthanum containing layer

Semiconductor device with implant and method of manufacturing same

Trench filling through reflowing filling material

FinFET devices and methods of forming

FinFET device and methods of forming

Ion implantation for nano-FET

Source/drain structure

Sacrificial layer for semiconductor process

Melt anneal source and drain regions

Enhanced channel strain to reduce contact resistance in NMOS FET devices

Method for patterning a lanthanum containing layer

Field effect transistor contact with reduced contact resistance using implantation process

FinFET device and methods of forming

Semiconductor structure and method for forming the same

Field effect transistor contact with reduced contact resistance

Method for patterning a lanthanum containing layer

Doping for semiconductor device with conductive feature

Field effect transistor contact with reduced contact resistance

Semiconductor device structure and method for forming the same

Ion implantation with annealing for substrate cutting

Method of forming semiconductor device by driving hydrogen into a dielectric layer from another dielectric layer

Metal loss prevention using implantation

Semiconductor structure with doped contact plug and method for forming the same

Semiconductor device having hydrogen in a dielectric layer

Semiconductor device having hydrogen in a dielectric layer

TAIWAN SEMICONDUCTOR MFG

Method of making a FinFET device

FinFETs and methods for forming the same

Contact structure and formation thereof

Methods for wet clean of oxide layers over epitaxial layers

CMOS device and method of forming the same

Methods of forming epitaxial structures

CHING KUO-CHENG

CMOS device and method of forming the same