Inventor
KURAGUCHI MASAHIKO
JP86 patents
⚠️ This page may combine multiple inventors who share the name “KURAGUCHI MASAHIKO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
49 patentsUS7755108B2Jul 13, 2010
Nitride-based semiconductor device
TOSHIBA KK82 citations98
US7449730B2Nov 11, 2008
Nitride-based semiconductor device
TOSHIBA KK55 citations98
US9818855B2Nov 14, 2017
Semiconductor device
TOSHIBA KK14 citations84
US9621153B2Apr 11, 2017
Gate control device, semiconductor device, and method for controlling semiconductor device
TOSHIBA KK16 citations84
US9461122B2Oct 4, 2016
Semiconductor device and manufacturing method for the same
TOSHIBA KK12 citations84
US9190508B2Nov 17, 2015
GaN based semiconductor device
TOSHIBA KK7 citations84
US7498618B2Mar 3, 2009
Nitride semiconductor device
TOSHIBA KK13 citations84
US10186588B1Jan 22, 2019
Semiconductor substrate and semiconductor device
TOSHIBA KK12 citations83
US11563114B2Jan 24, 2023
Semiconductor device and method of manufacturing the same
TOSHIBA KK3 citations73
US11476336B2Oct 18, 2022
Semiconductor device
TOSHIBA KK3 citations73
US11189718B2Nov 30, 2021
Semiconductor device with suppressed self-turn-on
TOSHIBA KK2 citations73
US11018248B2May 25, 2021
Semiconductor device and method for manufacturing the same
TOSHIBA KK3 citations73
US10453926B2Oct 22, 2019
Nitride-based semiconductor device and method of manufacturing the same
TOSHIBA KK1 citations73
US10431657B1Oct 1, 2019
Semiconductor device
TOSHIBA KK2 citations73
US10109715B2Oct 23, 2018
Semiconductor device
TOSHIBA KK2 citations73
US9837488B2Dec 5, 2017
Semiconductor device
TOSHIBA KK5 citations73
US9349807B2May 24, 2016
Semiconductor device having GaN-based layer
TOSHIBA KK5 citations73
US10373833B2Aug 6, 2019
Semiconductor device and method for manufacturing the same
TOSHIBA KK2 citations72
US12034051B2Jul 9, 2024
Nitride-based semiconductor device and method of manufacturing the same
TOSHIBA KK0 citations63
US11888040B2Jan 30, 2024
Semiconductor device and method for manufacturing the same
TOSHIBA KK0 citations63
US11545553B2Jan 3, 2023
Semiconductor device and method for manufacturing the same
TOSHIBA KK0 citations63
US11393904B2Jul 19, 2022
Nitride-based semiconductor device and method of manufacturing the same
TOSHIBA KK0 citations63
US11211463B2Dec 28, 2021
Semiconductor device and method for manufacturing the same
TOSHIBA KK0 citations63
US9484421B2Nov 1, 2016
Semiconductor device
TOSHIBA KK2 citations63
US9105565B2Aug 11, 2015
Nitride semiconductor device
TOSHIBA KK2 citations63
US8963203B2Feb 24, 2015
Nitride semiconductor device and method for manufacturing same
TOSHIBA KK3 citations63
US8368084B2Feb 5, 2013
Semiconductor device with capacitor disposed on gate electrode
TOSHIBA KK4 citations63
USRE50471EJun 24, 2025
Semiconductor device and method for manufacturing the same
TOSHIBA KK0 citations62
USRE49962EMay 7, 2024
Semiconductor device
TOSHIBA KK0 citations62
US11967641B2Apr 23, 2024
Semiconductor device including different nitride regions improving characteristics of the semiconductor device
TOSHIBA KK0 citations62
US11894452B2Feb 6, 2024
Semiconductor device, method for manufacturing the same, power circuit, and computer
TOSHIBA KK0 citations62
US11757028B2Sep 12, 2023
Semiconductor device and method for manufacturing the same
TOSHIBA KK0 citations62
US11677020B2Jun 13, 2023
Semiconductor device including different nitride regions and method for manufacturing same
TOSHIBA KK0 citations62
US11515411B2Nov 29, 2022
Silicon rich nitride layer between a plurality of semiconductor layers
TOSHIBA KK0 citations62
US11227942B2Jan 18, 2022
Semiconductor device, method for manufacturing the same, power circuit, and computer
TOSHIBA KK0 citations62
US11152480B2Oct 19, 2021
Semiconductor device
TOSHIBA KK1 citations62
US11139393B2Oct 5, 2021
Semiconductor device including different nitride regions and method for manufacturing same
TOSHIBA KK1 citations62
US11088269B2Aug 10, 2021
Semiconductor device
TOSHIBA KK1 citations62
US10916646B2Feb 9, 2021
Semiconductor device and method for manufacturing the same
TOSHIBA KK0 citations62
US10910490B2Feb 2, 2021
Semiconductor device
TOSHIBA KK1 citations62
US10283633B2May 7, 2019
Semiconductor device and method for manufacturing the same
TOSHIBA KK1 citations62
US12550396B2Feb 10, 2026
Semiconductor device
TOSHIBA KK0 citations52
US12543339B2Feb 3, 2026
Semiconductor device
TOSHIBA KK0 citations52
US12538513B2Jan 27, 2026
Semiconductor device and method for manufacturing the same
TOSHIBA KK0 citations52
US12513934B2Dec 30, 2025
Semiconductor device
TOSHIBA KK0 citations52
US12477769B2Nov 18, 2025
Semiconductor device in which current collapse and leakage current between source and drain regions are suppressed
TOSHIBA KK0 citations52
US12396228B2Aug 19, 2025
Semiconductor device
TOSHIBA KK0 citations52
US12349386B2Jul 1, 2025
Semiconductor device and method for manufacturing the same
TOSHIBA KK0 citations52
US12237409B2Feb 25, 2025
Semiconductor device
TOSHIBA KK0 citations52
KURAGUCHI MASAHIKO
1 patentShowing the top 50 of 86 patents by PatentIndex Score.