Inventor
CHEN FU-HSIN
TW40 patents
⚠️ This page may combine multiple inventors who share the name “CHEN FU-HSIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
17 patentsUS6924531B2Aug 2, 2005
LDMOS device with isolation guard rings
TAIWAN SEMICONDUCTOR MFG81 citations98
US7525155B2Apr 28, 2009
High voltage transistor structure for semiconductor device
TAIWAN SEMICONDUCTOR MFG8 citations84
US7525150B2Apr 28, 2009
High voltage double diffused drain MOS transistor with medium operation voltage
TAIWAN SEMICONDUCTOR MFG9 citations84
US7196375B2Mar 27, 2007
High-voltage MOS transistor
TAIWAN SEMICONDUCTOR MFG11 citations84
US7768071B2Aug 3, 2010
Stabilizing breakdown voltages by forming tunnels for ultra-high voltage devices
TAIWAN SEMICONDUCTOR MFG9 citations83
US7960786B2Jun 14, 2011
Breakdown voltages of ultra-high voltage devices by forming tunnels
TAIWAN SEMICONDUCTOR MFG17 citations82
US7508032B2Mar 24, 2009
High voltage device with low on-resistance
TAIWAN SEMICONDUCTOR MFG13 citations81
US7045414B2May 16, 2006
Method of fabricating high voltage transistor
TAIWAN SEMICONDUCTOR MFG8 citations74
US7989890B2Aug 2, 2011
Lateral power MOSFET with high breakdown voltage and low on-resistance
TAIWAN SEMICONDUCTOR MFG6 citations73
US7247909B2Jul 24, 2007
Method for forming an integrated circuit with high voltage and low voltage devices
TAIWAN SEMICONDUCTOR MFG7 citations71
US7888216B2Feb 15, 2011
Method of fabricating a high performance power MOS
TAIWAN SEMICONDUCTOR MFG3 citations60
US7868422B2Jan 11, 2011
MOS device with a high voltage isolation structure
TAIWAN SEMICONDUCTOR MFG3 citations60
US7723785B2May 25, 2010
High performance power MOS structure
TAIWAN SEMICONDUCTOR MFG2 citations60
US7994580B2Aug 9, 2011
High voltage transistor with improved driving current
TAIWAN SEMICONDUCTOR MFG3 citations59
US7183171B2Feb 27, 2007
Pyramid-shaped capacitor structure
TAIWAN SEMICONDUCTOR MFG2 citations57
US7893490B2Feb 22, 2011
HVNMOS structure for reducing on-resistance and preventing BJT triggering
TAIWAN SEMICONDUCTOR MFG0 citations48
US7915128B2Mar 29, 2011
High voltage semiconductor devices
TAIWAN SEMICONDUCTOR MFG0 citations38
LEXTAR ELECTRONICS CORP
10 patentsUS11588078B2Feb 21, 2023
Light emitting device and module
LEXTAR ELECTRONICS CORP4 citations74
US12463077B2Nov 4, 2025
Method of manufacturing display device
LEXTAR ELECTRONICS CORP0 citations62
US12431476B2Sep 30, 2025
Pixel package, method for forming the same, and display device using the same
LEXTAR ELECTRONICS CORP0 citations62
US11476133B2Oct 18, 2022
Picking apparatus with heating element and temperature-controlled adhesive and the method of using the same
LEXTAR ELECTRONICS CORP0 citations62
US11357145B2Jun 7, 2022
Picking apparatus capable of picking up target micro-elements
LEXTAR ELECTRONICS CORP1 citations60
US11294238B1Apr 5, 2022
Low blue light backlight module
LEXTAR ELECTRONICS CORP1 citations59
US11469352B2Oct 11, 2022
Display device and manufacturing method thereof
LEXTAR ELECTRONICS CORP0 citations51
US11302678B2Apr 12, 2022
Light-emitting package structure
LEXTAR ELECTRONICS CORP0 citations50
US10679974B2Jun 9, 2020
Display device having multiple pixels in a substrate groove
LEXTAR ELECTRONICS CORP0 citations41
US10720555B2Jul 21, 2020
Light emitting diode device and manufacturing method thereof
LEXTAR ELECTRONICS CORP0 citations37
VANGUARD INT SEMICONDUCT CORP
7 patentsUS10256332B1Apr 9, 2019
High hole mobility transistor
VANGUARD INT SEMICONDUCT CORP8 citations84
US10262997B2Apr 16, 2019
High-voltage LDMOSFET devices having polysilicon trench-type guard rings
VANGUARD INT SEMICONDUCT CORP4 citations72
US10692857B2Jun 23, 2020
Semiconductor device combining passive components with HEMT
VANGUARD INT SEMICONDUCT CORP1 citations62
US12575161B2Mar 10, 2026
Semiconductor device and fabrication method thereof
VANGUARD INT SEMICONDUCT CORP0 citations56
US10892320B2Jan 12, 2021
Semiconductor devices having stacked trench gate electrodes overlapping a well region
VANGUARD INT SEMICONDUCT CORP0 citations56
US10867993B2Dec 15, 2020
Touch sensing circuits and methods for detecting touch events
VANGUARD INT SEMICONDUCT CORP0 citations52
US12588255B2Mar 24, 2026
Semiconductor device and methods for forming the same
VANGUARD INT SEMICONDUCT CORP0 citations46
TIEN WILLIAM WEI-YUAN
3 patentsUS8174071B2May 8, 2012
High voltage LDMOS transistor
TIEN WILLIAM WEI-YUAN30 citations87
US8138559B2Mar 20, 2012
Recessed drift region for HVMOS breakdown improvement
TIEN WILLIAM WEI-YUAN2 citations59
US8268691B2Sep 18, 2012
High voltage transistor with improved driving current
TIEN WILLIAM WEI-YUAN2 citations58