P

Inventor

CHEN FU-HSIN

TW40 patents
⚠️ This page may combine multiple inventors who share the name “CHEN FU-HSIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG

17 patents
US6924531B2Aug 2, 2005

LDMOS device with isolation guard rings

TAIWAN SEMICONDUCTOR MFG81 citations98
US7525155B2Apr 28, 2009

High voltage transistor structure for semiconductor device

TAIWAN SEMICONDUCTOR MFG8 citations84
US7525150B2Apr 28, 2009

High voltage double diffused drain MOS transistor with medium operation voltage

TAIWAN SEMICONDUCTOR MFG9 citations84
US7196375B2Mar 27, 2007

High-voltage MOS transistor

TAIWAN SEMICONDUCTOR MFG11 citations84
US7768071B2Aug 3, 2010

Stabilizing breakdown voltages by forming tunnels for ultra-high voltage devices

TAIWAN SEMICONDUCTOR MFG9 citations83
US7960786B2Jun 14, 2011

Breakdown voltages of ultra-high voltage devices by forming tunnels

TAIWAN SEMICONDUCTOR MFG17 citations82
US7508032B2Mar 24, 2009

High voltage device with low on-resistance

TAIWAN SEMICONDUCTOR MFG13 citations81
US7045414B2May 16, 2006

Method of fabricating high voltage transistor

TAIWAN SEMICONDUCTOR MFG8 citations74
US7989890B2Aug 2, 2011

Lateral power MOSFET with high breakdown voltage and low on-resistance

TAIWAN SEMICONDUCTOR MFG6 citations73
US7247909B2Jul 24, 2007

Method for forming an integrated circuit with high voltage and low voltage devices

TAIWAN SEMICONDUCTOR MFG7 citations71
US7888216B2Feb 15, 2011

Method of fabricating a high performance power MOS

TAIWAN SEMICONDUCTOR MFG3 citations60
US7868422B2Jan 11, 2011

MOS device with a high voltage isolation structure

TAIWAN SEMICONDUCTOR MFG3 citations60
US7723785B2May 25, 2010

High performance power MOS structure

TAIWAN SEMICONDUCTOR MFG2 citations60
US7994580B2Aug 9, 2011

High voltage transistor with improved driving current

TAIWAN SEMICONDUCTOR MFG3 citations59
US7183171B2Feb 27, 2007

Pyramid-shaped capacitor structure

TAIWAN SEMICONDUCTOR MFG2 citations57
US7893490B2Feb 22, 2011

HVNMOS structure for reducing on-resistance and preventing BJT triggering

TAIWAN SEMICONDUCTOR MFG0 citations48
US7915128B2Mar 29, 2011

High voltage semiconductor devices

TAIWAN SEMICONDUCTOR MFG0 citations38

LEXTAR ELECTRONICS CORP

10 patents

VANGUARD INT SEMICONDUCT CORP

7 patents

TIEN WILLIAM WEI-YUAN

3 patents

REALTEK SEMICONDUCTOR CORP

2 patents

HUANG TSUNG-YI

1 patent