Inventor
SEO YOUNG-HUN
KR49 patents
⚠️ This page may combine multiple inventors who share the name “SEO YOUNG-HUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
29 patentsUS7532056B2May 12, 2009
On chip temperature detector, temperature detection method and refresh control method using the same
SAMSUNG ELECTRONICS CO LTD61 citations98
US7177218B2Feb 13, 2007
DRAM device with a refresh period that varies responsive to a temperature signal having a hysteresis characteristic
SAMSUNG ELECTRONICS CO LTD55 citations95
US10074408B2Sep 11, 2018
Bit line sense amplifier
SAMSUNG ELECTRONICS CO LTD26 citations94
US7515487B2Apr 7, 2009
Internal reference voltage generating circuit for reducing standby current and semiconductor memory device including the same
SAMSUNG ELECTRONICS CO LTD31 citations93
US10635535B2Apr 28, 2020
Semiconductor memory devices, memory systems, and methods of operating the semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD10 citations84
US7499359B2Mar 3, 2009
Temperature sensor instruction signal generator and semiconductor memory device having the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US7455452B2Nov 25, 2008
Temperature sensor capable of controlling sensing temperature
SAMSUNG ELECTRONICS CO LTD11 citations84
US7863914B2Jan 4, 2011
Method for testing semiconductor memory device using probe and semiconductor memory device using the same
SAMSUNG ELECTRONICS CO LTD9 citations82
US7486576B2Feb 3, 2009
Methods and devices for preventing data stored in memory from being read out
SAMSUNG ELECTRONICS CO LTD6 citations74
US7260002B2Aug 21, 2007
Methods and devices for preventing data stored in memory from being read out
SAMSUNG ELECTRONICS CO LTD5 citations74
US7180808B2Feb 20, 2007
Semiconductor memory device for performing refresh operation
SAMSUNG ELECTRONICS CO LTD8 citations74
US10884852B2Jan 5, 2021
Semiconductor memory devices, memory systems and methods of operating semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD4 citations73
US10741242B2Aug 11, 2020
Memory devices including voltage generation circuit for performing background calibration
SAMSUNG ELECTRONICS CO LTD3 citations73
US10706911B1Jul 7, 2020
Sense amplifier for sensing multi-level cell and memory device including the sense amplifier
SAMSUNG ELECTRONICS CO LTD3 citations73
US10573356B2Feb 25, 2020
Semiconductor memory devices, memory systems and methods of operating semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD6 citations73
US7843752B2Nov 30, 2010
Circuit and method for controlling refresh periods in semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD7 citations73
US11024364B2Jun 1, 2021
Sense amplifiers for sensing multilevel cells and memory devices including the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US11216339B2Jan 4, 2022
Semiconductor memory devices, memory systems and methods of operating semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD1 citations63
US9147465B2Sep 29, 2015
Circuit for controlling sense amplifier source node in semiconductor memory device and controlling method thereof
SAMSUNG ELECTRONICS CO LTD2 citations63
US7394290B2Jul 1, 2008
Semiconductor integrated circuit
SAMSUNG ELECTRONICS CO LTD6 citations63
US7323894B2Jan 29, 2008
Needle alignment verification circuit and method for semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations63
US7002872B2Feb 21, 2006
Semiconductor memory device with a decoupling capacitor
SAMSUNG ELECTRONICS CO LTD6 citations63
US6906967B2Jun 14, 2005
Negative drop voltage generator in semiconductor memory device and method of controlling negative voltage generation
SAMSUNG ELECTRONICS CO LTD3 citations63
US11194657B2Dec 7, 2021
Semiconductor memory devices, memory systems, and methods of operating the semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US9502132B2Nov 22, 2016
Multi level antifuse memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD2 citations61
US10854277B2Dec 1, 2020
Sense amplifier for sensing multi-level cell and memory device including the sense amplifer
SAMSUNG ELECTRONICS CO LTD0 citations52
US12125522B2Oct 22, 2024
Memory device
SAMSUNG ELECTRONICS CO LTD0 citations50
US12586631B2Mar 24, 2026
Memory device having load offset mismatch compensation
SAMSUNG ELECTRONICS CO LTD0 citations43
US7397281B2Jul 8, 2008
Input/output circuit of semiconductor memory device and input/output method thereof
SAMSUNG ELECTRONICS CO LTD0 citations42
DONGBU ELECTRONICS CO LTD
6 patentsUS7354825B2Apr 8, 2008
Methods and apparatus to form gates in semiconductor devices
DONGBU ELECTRONICS CO LTD2 citations63
US7153748B2Dec 26, 2006
Semiconductor devices and methods for fabricating the same
DONGBU ELECTRONICS CO LTD2 citations63
US7148117B2Dec 12, 2006
Methods for forming shallow trench isolation structures in semiconductor devices
DONGBU ELECTRONICS CO LTD4 citations63
US7371656B2May 13, 2008
Method for forming STI of semiconductor device
DONGBU ELECTRONICS CO LTD1 citations52
US7294555B2Nov 13, 2007
Method of forming trench in semiconductor device using polish stop layer and anti-reflection coating
DONGBU ELECTRONICS CO LTD0 citations52
US7224012B2May 29, 2007
Thin film capacitor and fabrication method thereof
DONGBU ELECTRONICS CO LTD0 citations52
DONGBUANAM SEMICONDUCTOR INC
4 patentsUS6909592B2Jun 21, 2005
Thin film capacitor and fabrication method thereof
DONGBUANAM SEMICONDUCTOR INC17 citations84
US7015114B2Mar 21, 2006
Trench in semiconductor device and formation method thereof
DONGBUANAM SEMICONDUCTOR INC4 citations63
US6995070B2Feb 7, 2006
Fabricating method of thin film capacitor
DONGBUANAM SEMICONDUCTOR INC4 citations63
US7030454B2Apr 18, 2006
Semiconductor devices and methods of forming a trench in a semiconductor device
DONGBUANAM SEMICONDUCTOR INC0 citations52
NOH KWANG-SOOK
2 patentsUS8218137B2Jul 10, 2012
Methods of operating DRAM devices having adjustable internal refresh cycles that vary in response to on-chip temperature changes
NOH KWANG-SOOK27 citations92
US8537633B2Sep 17, 2013
Methods of operating DRAM devices having adjustable internal refresh cycles that vary in response to on-chip temperature changes
NOH KWANG-SOOK3 citations62