Inventor
CHAPPLE-SOKOL JONATHAN D
US22 patents
⚠️ This page may combine multiple inventors who share the name “CHAPPLE-SOKOL JONATHAN D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
20 patentsUS5354707AOct 11, 1994
Method of making semiconductor quantum dot light emitting/detecting devices
IBM280 citations99
US5293050AMar 8, 1994
Semiconductor quantum dot light emitting/detecting devices
IBM333 citations99
US5505816AApr 9, 1996
Etching of silicon dioxide selectively to silicon nitride and polysilicon
IBM328 citations98
US5431734AJul 11, 1995
Aluminum oxide low pressure chemical vapor deposition (LPCVD) system-fourier transform infrared (FTIR) source chemical control
IBM431 citations98
US5612255AMar 18, 1997
One dimensional silicon quantum wire devices and the method of manufacture thereof
IBM63 citations96
US5383088AJan 17, 1995
Storage capacitor with a conducting oxide electrode for metal-oxide dielectrics
IBM72 citations96
US5268069ADec 7, 1993
Safe method for etching silicon dioxide
IBM44 citations90
US5465859ANov 14, 1995
Dual phase and hybrid phase shifting mask fabrication using a surface etch monitoring technique
IBM30 citations89
US5540777AJul 30, 1996
Aluminum oxide LPCVD system
IBM17 citations81
US5134963AAug 4, 1992
LPCVD reactor for high efficiency, high uniformity deposition
IBM15 citations74
US5534066AJul 9, 1996
Fluid delivery apparatus having an infrared feedline sensor
IBM14 citations73
US5492718AFeb 20, 1996
Fluid delivery apparatus and method having an infrared feedline sensor
IBM11 citations73
US6762121B2Jul 13, 2004
Method of forming refractory metal contact in an opening, and resulting structure
IBM2 citations63
US8003536B2Aug 23, 2011
Electromigration resistant aluminum-based metal interconnect structure
IBM2 citations62
US7879716B2Feb 1, 2011
Metal seed layer deposition
IBM2 citations61
US7235487B2Jun 26, 2007
Metal seed layer deposition
IBM4 citations61
US7649262B2Jan 19, 2010
Suppression of localized metal precipitate formation and corresponding metallization depletion in semiconductor processing
IBM2 citations60
US9685370B2Jun 20, 2017
Titanium tungsten liner used with copper interconnects
IBM1 citations52
US9196519B2Nov 24, 2015
Achieving uniform capacitance between an electrostatic chuck and a semiconductor wafer
IBM0 citations52
US7173338B2Feb 6, 2007
Suppression of localized metal precipitate formation and corresponding metallization depletion in semiconductor processing
IBM0 citations50