Inventor

KENCKE DAVID L

US40 patents

⚠️ This page may combine multiple inventors who share the name “KENCKE DAVID L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KENCKE DAVID L

INTEL CORP

Biasing scheme of floating unselected wordlines and bitlines of a diode-based memory array

Spin-transfer torque memory (STTM) devices having magnetic contacts

Techniques for forming spin-transfer torque memory having a dot-contacted free magnetic layer

Hybrid phase field effect transistor

Hybrid phase field effect transistor

Asymmetric channel doping for improved memory operation for floating body cell (FBC) memory

Asymmetric channel doping for improved memory operation for floating body cell (FBC) memory

Low stray field magnetic memory

Spin-transfer torque memory (STTM) devices having magnetic contacts

Techniques for forming spin-transfer torque memory (STTM) elements having annular contacts

High stability spintronic memory

Perpendicular MTJ stacks with magnetic anisotrophy enhancing layer and crystallization barrier layer

Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same

Electric field enhanced spin transfer torque memory (STTM) device

High stability spintronic memory

Perpendicular magnetic memory with reduced switching current

Perpendicular magnetic memory with filament conduction path

Spin transfer torque memory (STTM) devices with decreased critical current and computing device comprising the same

Techniques for forming spin-transfer torque memory having a dot-contacted free magnetic layer

Write current reduction in spin transfer torque memory devices

Multiple oxide thickness for a semiconductor device

Isolation structures for an integrated circuit element and method of making same

DOYLE BRIAN S

Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same

Electric field enhanced spin transfer torque memory (STTM) device

Write current reduction in spin transfer torque memory devices

Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same

Method for reducing size and center positioning of magnetic memory element contacts

KARPOV ELIJAH V

Thermal isolation in memory cells

Decreased switching current in spin-transfer torque memory

Decreased switching current in spin-transfer torque memory

CHANG PETER L D

Floating body memory cell having gates favoring different conductivity type regions

Floating body memory cell having gates favoring different conductivity type regions

UNIV TEXAS

Floating gate transistor having buried strained silicon germanium channel layer

Vertical channel floating gate transistor having silicon germanium channel layer

OGUZ KAAN

Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer

Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer

KUO CHARLES

Selector for low voltage embedded memory

KAVALIEROS JACK T

Hetero-bimos injection process for non-volatile flash memory

KUO CHARLES C

Spin transfer torque memory (STTM) device with half-metal and method to write and read the device

SAVRANSKY SEMYON D

Phase change memory with layered insulator