Inventor
AHN JONG-HYUN
KR45 patents
⚠️ This page may combine multiple inventors who share the name “AHN JONG-HYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNIV ILLINOIS
11 patentsUS8905772B2Dec 9, 2014
Stretchable and foldable electronic devices
UNIV ILLINOIS120 citations98
US7972875B2Jul 5, 2011
Optical systems fabricated by printing-based assembly
UNIV ILLINOIS596 citations98
US9601671B2Mar 21, 2017
Optical systems fabricated by printing-based assembly
UNIV ILLINOIS24 citations97
US9117940B2Aug 25, 2015
Optical systems fabricated by printing-based assembly
UNIV ILLINOIS52 citations97
US10064269B2Aug 28, 2018
Stretchable and foldable electronic devices
UNIV ILLINOIS26 citations94
US10424572B2Sep 24, 2019
Optical systems fabricated by printing-based assembly
UNIV ILLINOIS8 citations92
US10361180B2Jul 23, 2019
Optical systems fabricated by printing-based assembly
UNIV ILLINOIS10 citations92
US10292261B2May 14, 2019
Stretchable and foldable electronic devices
UNIV ILLINOIS13 citations92
US10504882B2Dec 10, 2019
Optical systems fabricated by printing-based assembly
UNIV ILLINOIS7 citations84
US11309305B2Apr 19, 2022
Optical systems fabricated by printing-based assembly
UNIV ILLINOIS1 citations73
US12136620B2Nov 5, 2024
Optical systems fabricated by printing-based assembly
UNIV ILLINOIS0 citations62
UNIV YONSEI IACF
8 patentsUS10852891B2Dec 1, 2020
Ultra-thin touch panel and method of fabricating the same
UNIV YONSEI IACF3 citations66
US10910415B2Feb 2, 2021
Three-dimensional photodetector and method of manufacturing the same
UNIV YONSEI IACF0 citations62
US12497690B2Dec 16, 2025
Transient sensor using molybdenum disulfide and method of manufacturing the same
UNIV YONSEI IACF0 citations57
US11781217B2Oct 10, 2023
Transient sensor using molybdenum disulfide and method of manufacturing the same
UNIV YONSEI IACF0 citations57
US10840377B2Nov 17, 2020
Flexible high performance inorganic matter FET using built-in strain of inorganic matter on insulator wafer
UNIV YONSEI IACF0 citations52
US10490664B2Nov 26, 2019
Flexible high performance inorganic matter FET using built-in strain of inorganic matter on insulator wafer
UNIV YONSEI IACF0 citations52
US11233107B2Jan 25, 2022
Active matrix organic light-emitting diode display device and method of manufacturing the same
UNIV YONSEI IACF0 citations43
US10811162B2Oct 20, 2020
Method for healing defect of conductive layer, method for forming metal-carbon compound layer, 2D nano materials, transparent electrode and method for manufacturing the same
UNIV YONSEI IACF0 citations35
SAMSUNG DISPLAY CO LTD
5 patentsUS12490389B2Dec 2, 2025
Display device
SAMSUNG DISPLAY CO LTD0 citations59
US12433095B2Sep 30, 2025
Display device
SAMSUNG DISPLAY CO LTD0 citations58
US12248338B2Mar 11, 2025
Display apparatus
SAMSUNG DISPLAY CO LTD0 citations57
US10147746B2Dec 4, 2018
Flexible display device and method of manufacturing the same
SAMSUNG DISPLAY CO LTD0 citations51
US9960192B2May 1, 2018
Flexible display device and method of manufacturing the same
SAMSUNG DISPLAY CO LTD0 citations51
AHN JONG-HYUN
3 patentsUS9297831B2Mar 29, 2016
Touch sensor using graphene for simultaneously detecting a pressure and a position
AHN JONG-HYUN16 citations82
US9098162B2Aug 4, 2015
Touch panel including graphene and method of manufacturing the same
AHN JONG-HYUN5 citations71
US8729614B2May 20, 2014
Flexible ferroelectric memory device and manufacturing method for the same
AHN JONG-HYUN5 citations69
ASM IP HOLDING BV
2 patentsSAMSUNG ELECTRONICS CO LTD
2 patentsSONG YOUNG-IL
2 patentsUS8431103B2Apr 30, 2013
Method of manufacturing graphene, graphene manufactured by the method, conductive film comprising the graphene, transparent electrode comprising the graphene, and radiating or heating device comprising the graphene
SONG YOUNG-IL3 citations59
US9260309B2Feb 16, 2016
Method and apparatus for manufacturing graphene
SONG YOUNG-IL1 citations48
UIF UNIV INDUSTRY FOUNDATION YONSEI UNIV
2 patentsUS11424287B2Aug 23, 2022
Light emitting diode integrated with transition metal dichalcogenide transistor and method for manufacturing the same
UIF UNIV INDUSTRY FOUNDATION YONSEI UNIV0 citations58
US11830397B2Nov 28, 2023
Stretchable display based on 3 dimensional structure and manufacturing method thereof
UIF UNIV INDUSTRY FOUNDATION YONSEI UNIV0 citations45