P

Inventor

NISHIKAWA YUKIE

JP50 patents
⚠️ This page may combine multiple inventors who share the name “NISHIKAWA YUKIE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

41 patents
US5864171AJan 26, 1999

Semiconductor optoelectric device and method of manufacturing the same

TOSHIBA KK161 citations99
US7560767B2Jul 14, 2009

Nonvolatile semiconductor memory device

TOSHIBA KK64 citations98
US7091561B2Aug 15, 2006

Field effect transistor and method of manufacturing the same

TOSHIBA KK69 citations98
US5821555AOct 13, 1998

Semicoductor device having a hetero interface with a lowered barrier

TOSHIBA KK283 citations98
US5696389ADec 9, 1997

Light-emitting semiconductor device

TOSHIBA KK623 citations98
US5153889AOct 6, 1992

Semiconductor light emitting device

TOSHIBA KK140 citations98
US6080599AJun 27, 2000

Semiconductor optoelectric device and method of manufacturing the same

TOSHIBA KK37 citations96
US5048035ASep 10, 1991

Semiconductor light emitting device

TOSHIBA KK94 citations96
US5488233AJan 30, 1996

Semiconductor light-emitting device with compound semiconductor layer

TOSHIBA KK66 citations95
US5321712AJun 14, 1994

Semiconductor light-emitting device having a cladding layer composed of an InGaAlp-based compound

TOSHIBA KK21 citations93
US6914312B2Jul 5, 2005

Field effect transistor having a MIS structure and method of fabricating the same

TOSHIBA KK34 citations92
US5585649ADec 17, 1996

Compound semiconductor devices and methods of making compound semiconductor devices

TOSHIBA KK44 citations92
US5282218AJan 25, 1994

Semiconductor laser device

TOSHIBA KK33 citations92
US6072203AJun 6, 2000

Semiconductor device

TOSHIBA KK23 citations91
US7902588B2Mar 8, 2011

Nonvolatile semiconductor memory device and method for manufacturing the same

TOSHIBA KK10 citations84
US6787433B2Sep 7, 2004

Semiconductor device and method of manufacturing the same

TOSHIBA KK13 citations84
US5058120AOct 15, 1991

Visible light emitting semiconductor laser with inverse mesa-shaped groove section

TOSHIBA KK21 citations82
US4922499AMay 1, 1990

Semiconductor laser device and the manufacturing method thereof

TOSHIBA KK18 citations81
US5305341AApr 19, 1994

Semiconductor laser whose active layer has an ordered structure

TOSHIBA KK12 citations74
US5202895AApr 13, 1993

Semiconductor device having an active layer made of ingaalp material

TOSHIBA KK12 citations74
US5034957AJul 23, 1991

Semiconductor laser device

TOSHIBA KK13 citations74
US9741838B2Aug 22, 2017

Semiconductor device

TOSHIBA KK4 citations73
US8969157B2Mar 3, 2015

Method of manufacturing semiconductor device having field plate electrode

TOSHIBA KK4 citations73
US6005263ADec 21, 1999

Light emitter with lowered heterojunction interface barrier

TOSHIBA KK8 citations73
US4987097AJan 22, 1991

Method of manufacturing a semiconductor laser device

TOSHIBA KK11 citations73
US9947574B2Apr 17, 2018

Semiconductor device

TOSHIBA KK4 citations72
US7755136B2Jul 13, 2010

Nonvolatile semiconductor memory device and method of manufacturing the same

TOSHIBA KK6 citations63
US7405451B2Jul 29, 2008

Semiconductor device including MIS transistors

TOSHIBA KK4 citations63
US7115953B2Oct 3, 2006

Semiconductor device and method of manufacturing semiconductor device

TOSHIBA KK2 citations63
US7015121B2Mar 21, 2006

Semiconductor device and method of manufacturing the same

TOSHIBA KK2 citations63
US7550801B2Jun 23, 2009

Nonvolatile semiconductor memory device

TOSHIBA KK4 citations62
US12191266B2Jan 7, 2025

Semiconductor device and manufacturing method of semiconductor device

TOSHIBA KK0 citations60
US9853023B2Dec 26, 2017

Semiconductor device and semiconductor package

TOSHIBA KK0 citations52
US9570439B2Feb 14, 2017

Semiconductor device and semiconductor package

TOSHIBA KK0 citations52
US7968933B2Jun 28, 2011

Nonvolatile semiconductor memory device

TOSHIBA KK0 citations52
US7538013B2May 26, 2009

Method of manufacturing a field effect transistor comprising an insulating film including metal oxide having crystallinity and different in a lattice distance from semiconductor substrate

TOSHIBA KK0 citations52
US9041143B2May 26, 2015

Semiconductor devices

TOSHIBA KK0 citations51
US9991418B2Jun 5, 2018

Semiconductor light emitting element

TOSHIBA KK0 citations50
US11985897B2May 14, 2024

Semiconductor device

TOSHIBA KK0 citations46
US11817476B2Nov 14, 2023

Semiconductor device

TOSHIBA KK0 citations46
US11056557B2Jul 6, 2021

Semiconductor device including a semi-insulating layer contacting a first region at a first surface of a semiconductor layer

TOSHIBA KK0 citations46

NISHIKAWA YUKIE

3 patents

YAMASAKI HIRONORI

2 patents

KOMATSU MFG CO LTD

1 patent

FURUKI KATSUYOSHI

1 patent

YAMAMOTO MASAHIRO

1 patent

KATAOKA TAKASHI

1 patent