USRE44215EExpiredUtility

Semiconductor optoelectric device and method of manufacturing the same

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Assignee: YAMAMOTO MASAHIROPriority: Mar 30, 1995Filed: Oct 11, 2011Granted: May 14, 2013
Est. expiryMar 30, 2015(expired)· nominal 20-yr term from priority
Inventors:Masahiro YamamotoHidetoshi FujimotoYoshihiro KokubunMasayuki IshikawaShinji SaitoYukie NishikawaJohn Rennie
Y10S438/975Y10S438/973H01S 5/0213H01S 5/0202H01S 5/32341H01S 5/32025H01S 5/3226H10H 20/817H10H 20/819
44
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References
22
Claims

Abstract

The present invention is intended to provide a semiconductor optoelectric device with high luminescent efficiency and a method of manufacturing the same. The semiconductor optoelectric device 18 according to the present invention is constructed by depositing compound-semiconductor layers 13 and 14 on a monocrystalline substrate 11 of a hexagonal close-packed structure. The shape of the monocrystalline substrate 11 is a parallelogram. Individual sides of the parallelogram are parallel to a <11-20> orientation. As the monocrystalline substrate, sapphire, zinc oxide or silicon carbide may be used. As the compound-semiconductor layers, an n-type GaN layer 13 and p-type GaN layer 14 may be used.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A semiconductor optoelectric device, comprising:
 a polygonal monocrystalline substrate of a hexagonal close-packed structure, oriented in <0001> axis, and having a polygonal peripheral area, individual sides of the polygonal monocrystalline substrate are substantially parallel to <11-20> axis; 
 compound-semiconductor layers deposited on said polygonal monocrystalline substrate; and 
 electrodes connected to said compound-semiconductor layers; 
 wherein a surface roughness of a back surface of said substrate falls within 10% of the thickness of said substrate. 
 
     
     
       2. The semiconductor optoelectric device according to  claim 1 , wherein said polygonal monocrystalline substrate is one selected from the group consisting of sapphire, zinc oxide, and silicon carbide. 
     
     
       3. The semiconductor optoelectric device according to  claim 1 , wherein a compound-semiconductor used in said compound-semiconductor layers is hexagonal close-packed structure. 
     
     
       4. The semiconductor optoelectric device according to  claim 1 , wherein part of said compound-semiconductor layers is a hexagonal close-packed structure compound-semiconductor layer containing nitrogen. 
     
     
       5. The semiconductor optoelectric device according to  claim 1 , wherein the shape of said polygonal monocrystalline substrate is a parallelogram. 
     
     
       6. A semiconductor optoelectric device, comprising:
 a polygonal monocrystalline substrate of a hexagonal close-packed structure, oriented in <0001> axis, and having a polygonal peripheral area, individual sides of said polygonal monocrystalline substrate are substantially parallel to <1-100> axis or <11-20> axis, a thickness of said polygonal monocrystalline substrate is at least half as wide as a longest side of said polygonal monocrystalline substrate, a surface roughness of a back surface of said polygonal monocrystalline substrate falls within 10% of the thickness of said polygonal monocrystalline substrate;   compound-semiconductor layers deposited on the polygonal monocrystalline substrate; and   electrodes connected to said compound-semiconductor layers.   
     
     
       7. The semiconductor optoelectric device according to  claim 6 , wherein said polygonal monocrystalline substrate is one selected from the group consisting of sapphire, zinc oxide and silicon carbide. 
     
     
       8. The semiconductor optoelectric device according to  claim 6 , wherein a compound-semiconductor used in said compound-semiconductor layers is a hexagonal close-packed structure. 
     
     
       9. The semiconductor optoelectric device according to  claim 6 , wherein part of said compound-semiconductor layers is a hexagonal close-packed structure compound-semiconductor layer containing nitrogen. 
     
     
       10. The semiconductor optoelectric device according to  claim 6 , wherein the shape of said polygonal monocrystalline substrate is a parallelogram. 
     
     
       11. A semiconductor optoelectric device, comprising:
 a polygonal monocrystalline substrate of a hexagonal close-packed structure, oriented in <0001> axis, and having a polygonal peripheral area, one side of said polygonal monocrystalline substrate is substantially parallel to <11-20> axis, another side of said polygonal monocrystalline substrate is substantially parallel to <1-100> axis, a thickness of said polygonal monocrystalline substrate is at least half as wide as a longest side of said polygonal monocrystalline substrate, and a surface roughness of a back surface of said polygonal monocrystalline substrate falls within 10% of the thickness of said polygonal monocrystalline substrate.   
     
     
       12. The semiconductor optoelectric device according to  claim 11 , wherein said polygonal monocrystalline substrate is one selected from the group consisting of sapphire, zinc oxide and silicon carbide. 
     
     
       13. The semiconductor optoelectric device according to  claim 11 , wherein a compound-semiconductor used in said compound-semiconductor layers is a hexagonal close-packed structure. 
     
     
       14. The semiconductor optoelectric device according to  claim 11 , wherein part of said compound-semiconductor layers is a hexagonal close-packed structure compound-semiconductor layer containing nitrogen. 
     
     
       15. The semiconductor optoelectric device according to claim  11  1, wherein the shape of said polygonal monocrystalline substrate is a rectangle or a square. 
     
     
       16. The semiconductor optoelectric device according to  claim 1 , wherein the semiconductor optoelectric device comprises a laser diode. 
     
     
       17. The semiconductor optoelectric device according to  claim 6 , wherein the semiconductor optoelectric device comprises a laser diode. 
     
     
       18. The semiconductor optoelectric device according to  claim 11 , wherein the semiconductor optoelectric device comprises a laser diode. 
     
     
       19. The semiconductor optoelectric device according to claim 1, wherein
 said substrate is in the shape of a parallelogram in which two sides are substantially parallel to the <11-20> axis, and the other sides are substantially parallel to the <1-100> axis.   
     
     
       20. The semiconductor optoelectric device according to claim 1, wherein
 one side of said substrate is substantially parallel to the <11-20> axis, and another side is substantially parallel to the <1-100> axis.   
     
     
       21. The semiconductor optoelectric device according to claim 19, wherein the semiconductor optoelectric device comprises a laser diode. 
     
     
       22. The semiconductor optoelectric device according to claim 20, wherein the semiconductor optoelectric device comprises a laser diode.

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