Inventor
YU CHEN-JU
TW50 patents
⚠️ This page may combine multiple inventors who share the name “YU CHEN-JU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
30 patentsUS11404557B2Aug 2, 2022
Method of forming a high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10050117B2Aug 14, 2018
Method of forming a high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9704968B2Jul 11, 2017
Method of forming a high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US9443969B2Sep 13, 2016
Transistor having metal diffusion barrier
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10790375B2Sep 29, 2020
High electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10741665B2Aug 11, 2020
Method of forming a high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9508807B2Nov 29, 2016
Method of forming high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12230690B2Feb 18, 2025
Method of forming a high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11804538B2Oct 31, 2023
Method of forming a high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US9583588B2Feb 28, 2017
Method of making high electron mobility transistor structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9553182B2Jan 24, 2017
Circuit structure, transistor and semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9419093B2Aug 16, 2016
Method of forming a high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US10868134B2Dec 15, 2020
Method of making transistor having metal diffusion barrier
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10868135B2Dec 15, 2020
High electron mobility transistor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10522630B2Dec 31, 2019
High electron mobility transistor structure and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10283599B2May 7, 2019
High electron mobility transistor structure and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10276682B2Apr 30, 2019
High electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10164047B2Dec 25, 2018
High electron mobility transistor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10115813B2Oct 30, 2018
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10096690B2Oct 9, 2018
Circuit structure, transistor and semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10020361B2Jul 10, 2018
Circuit structure having islands between source and drain and circuit formed
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9985103B2May 29, 2018
Method of forming high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9871030B2Jan 16, 2018
Plasma protection diode for a HEMT device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9793371B2Oct 17, 2017
Method of forming a high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9755045B2Sep 5, 2017
Rectifier structures with low leakage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9748372B2Aug 29, 2017
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9728613B2Aug 8, 2017
High electron mobility transistor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9502311B2Nov 22, 2016
Plasma protection diode for a HEMT device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9425300B2Aug 23, 2016
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9412835B2Aug 9, 2016
Rectifier structures with low leakage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
TAIWAN SEMICONDUCTOR MFG
8 patentsUS9147743B2Sep 29, 2015
High electron mobility transistor structure with improved breakdown voltage performance
TAIWAN SEMICONDUCTOR MFG4 citations84
US9184259B2Nov 10, 2015
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG2 citations63
US9111956B2Aug 18, 2015
Rectifier structures with low leakage
TAIWAN SEMICONDUCTOR MFG1 citations63
US9385225B2Jul 5, 2016
Method of making a circuit structure having islands between source and drain
TAIWAN SEMICONDUCTOR MFG0 citations52
US9224829B2Dec 29, 2015
High electron mobility transistor and method of forming the same
TAIWAN SEMICONDUCTOR MFG1 citations52
US9111904B2Aug 18, 2015
Substrate breakdown voltage improvement for group III-nitride on a silicon substrate
TAIWAN SEMICONDUCTOR MFG0 citations52
US8884334B2Nov 11, 2014
Composite layer stacking for enhancement mode transistor
TAIWAN SEMICONDUCTOR MFG1 citations52
US8884308B2Nov 11, 2014
High electron mobility transistor structure with improved breakdown voltage performance
TAIWAN SEMICONDUCTOR MFG0 citations52
WONG KING-YUEN
4 patentsUS9165839B2Oct 20, 2015
Plasma protection diode for a HEMT device
WONG KING-YUEN6 citations84
US8624296B1Jan 7, 2014
High electron mobility transistor including an embedded flourine region
WONG KING-YUEN18 citations84
US8841703B2Sep 23, 2014
High electron mobility transistor and method of forming the same
WONG KING-YUEN4 citations73
US8748942B2Jun 10, 2014
High electron mobility transistor and method of forming the same
WONG KING-YUEN0 citations52
Yao fu-wei
3 patentsUS9111905B2Aug 18, 2015
High electron mobility transistor and method of forming the same
Yao fu-wei12 citations92
US8680535B2Mar 25, 2014
High electron mobility transistor structure with improved breakdown voltage performance
Yao fu-wei7 citations83
US9018677B2Apr 28, 2015
Semiconductor structure and method of forming the same
Yao fu-wei1 citations51