Inventor
HSIUNG CHIH-WEN
TW46 patents
⚠️ This page may combine multiple inventors who share the name “HSIUNG CHIH-WEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
20 patentsUS10056478B2Aug 21, 2018
High-electron-mobility transistor and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10002955B2Jun 19, 2018
High-electron-mobility transistor and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9887302B2Feb 6, 2018
Schottky barrier diode
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations82
US9583588B2Feb 28, 2017
Method of making high electron mobility transistor structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11011380B2May 18, 2021
High-electron-mobility transistor and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10868135B2Dec 15, 2020
High electron mobility transistor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10811261B2Oct 20, 2020
Manufacturing method for high-electron-mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10522630B2Dec 31, 2019
High electron mobility transistor structure and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10283599B2May 7, 2019
High electron mobility transistor structure and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10164047B2Dec 25, 2018
High electron mobility transistor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10115813B2Oct 30, 2018
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10020361B2Jul 10, 2018
Circuit structure having islands between source and drain and circuit formed
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9748372B2Aug 29, 2017
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9728613B2Aug 8, 2017
High electron mobility transistor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9502524B2Nov 22, 2016
Compound semiconductor device having gallium nitride gate structures
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9502585B2Nov 22, 2016
Schottky barrier diode and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9425300B2Aug 23, 2016
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9048174B2Jun 2, 2015
Compound semiconductor device having gallium nitride gate structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9455341B2Sep 27, 2016
Transistor having a back-barrier layer and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9806158B2Oct 31, 2017
HEMT-compatible lateral rectifier structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42
TAIWAN SEMICONDUCTOR MFG
7 patentsUS9343542B2May 17, 2016
Method for fabricating enhancement mode transistor
TAIWAN SEMICONDUCTOR MFG5 citations84
US9147743B2Sep 29, 2015
High electron mobility transistor structure with improved breakdown voltage performance
TAIWAN SEMICONDUCTOR MFG4 citations84
US8901609B1Dec 2, 2014
Transistor having doped substrate and method of making the same
TAIWAN SEMICONDUCTOR MFG12 citations83
US9184259B2Nov 10, 2015
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG2 citations63
US9385225B2Jul 5, 2016
Method of making a circuit structure having islands between source and drain
TAIWAN SEMICONDUCTOR MFG0 citations52
US8884334B2Nov 11, 2014
Composite layer stacking for enhancement mode transistor
TAIWAN SEMICONDUCTOR MFG1 citations52
US8884308B2Nov 11, 2014
High electron mobility transistor structure with improved breakdown voltage performance
TAIWAN SEMICONDUCTOR MFG0 citations52
RICHTEK TECHNOLOGY CORP
5 patentsUS12272592B2Apr 8, 2025
High voltage device and manufacturing method thereof
RICHTEK TECHNOLOGY CORP0 citations61
US12062570B2Aug 13, 2024
High voltage device and manufacturing method thereof
RICHTEK TECHNOLOGY CORP0 citations61
US12408371B2Sep 2, 2025
NMOS half-bridge power device and manufacturing method thereof
RICHTEK TECHNOLOGY CORP0 citations51
US12349448B2Jul 1, 2025
Integration manufacturing method of depletion high voltage NMOS device and depletion low voltage NMOS device
RICHTEK TECHNOLOGY CORP0 citations51
US12136650B2Nov 5, 2024
High voltage device and manufacturing method thereof
RICHTEK TECHNOLOGY CORP0 citations50
MEDIATEK INC
3 patentsUS10199496B2Feb 5, 2019
Semiconductor device capable of high-voltage operation
MEDIATEK INC6 citations82
US10879389B2Dec 29, 2020
Semiconductor device capable of high-voltage operation
MEDIATEK INC0 citations50
US10541328B2Jan 21, 2020
Semiconductor device capable of high-voltage operation
MEDIATEK INC0 citations50