P

Inventor

HSIUNG CHIH-WEN

TW46 patents
⚠️ This page may combine multiple inventors who share the name “HSIUNG CHIH-WEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

20 patents
US10056478B2Aug 21, 2018

High-electron-mobility transistor and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10002955B2Jun 19, 2018

High-electron-mobility transistor and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9887302B2Feb 6, 2018

Schottky barrier diode

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations82
US9583588B2Feb 28, 2017

Method of making high electron mobility transistor structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11011380B2May 18, 2021

High-electron-mobility transistor and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10868135B2Dec 15, 2020

High electron mobility transistor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10811261B2Oct 20, 2020

Manufacturing method for high-electron-mobility transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10522630B2Dec 31, 2019

High electron mobility transistor structure and method of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10283599B2May 7, 2019

High electron mobility transistor structure and method of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10164047B2Dec 25, 2018

High electron mobility transistor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10115813B2Oct 30, 2018

Semiconductor structure and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10020361B2Jul 10, 2018

Circuit structure having islands between source and drain and circuit formed

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9748372B2Aug 29, 2017

Semiconductor structure and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9728613B2Aug 8, 2017

High electron mobility transistor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9502524B2Nov 22, 2016

Compound semiconductor device having gallium nitride gate structures

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9502585B2Nov 22, 2016

Schottky barrier diode and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9425300B2Aug 23, 2016

Semiconductor structure and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9048174B2Jun 2, 2015

Compound semiconductor device having gallium nitride gate structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9455341B2Sep 27, 2016

Transistor having a back-barrier layer and method of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9806158B2Oct 31, 2017

HEMT-compatible lateral rectifier structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42

TAIWAN SEMICONDUCTOR MFG

7 patents

RICHTEK TECHNOLOGY CORP

5 patents

MEDIATEK INC

3 patents

Yao fu-wei

2 patents

YU CHEN-JU

2 patents

LEADTREND TECH CORP

2 patents

IND TECH RES INST

1 patent

KALNITSKY ALEXANDER

1 patent

HSIUNG CHIH-WEN

1 patent

WONG KING-YUEN

1 patent

LEADTREND TECH CORPORATION

1 patent