Inventor
BAGLEE DAVID A
US17 patents
Patents
17 patentsUS4835741AMay 30, 1989
Frasable electrically programmable read only memory cell using a three dimensional trench floating gate
TEXAS INSTRUMENTS INC57 citations96
US4718041AJan 5, 1988
EEPROM memory having extended life
TEXAS INSTRUMENTS INC118 citations96
US5681768AOct 28, 1997
Transistor having reduced hot carrier implantation
TEXAS INSTRUMENTS INC19 citations92
US5679968AOct 21, 1997
Transistor having reduced hot carrier implantation
TEXAS INSTRUMENTS INC21 citations92
US4975383ADec 4, 1990
Method for making an electrically erasable programmable read only memory cell having a three dimensional floating gate
TEXAS INSTRUMENTS INC29 citations92
US4975384ADec 4, 1990
Erasable electrically programmable read only memory cell using trench edge tunnelling
TEXAS INSTRUMENTS INC45 citations92
US4796228AJan 3, 1989
Erasable electrically programmable read only memory cell using trench edge tunnelling
TEXAS INSTRUMENTS INC46 citations92
US4721987AJan 26, 1988
Trench capacitor process for high density dynamic RAM
TEXAS INSTRUMENTS INC25 citations91
USRE33261EJul 10, 1990
Trench capacitor for high density dynamic RAM
TEXAS INSTRUMENTS INC20 citations81
US4641173AFeb 3, 1987
Integrated circuit load device
TEXAS INSTRUMENTS INC12 citations74
US5374580ADec 20, 1994
Method of forming high density DRAM having increased capacitance area due to trench etched into storage capacitor region
TEXAS INSTRUMENTS INC13 citations73
US4830981AMay 16, 1989
Trench capacitor process for high density dynamic ram
TEXAS INSTRUMENTS INC13 citations72
US4569117AFeb 11, 1986
Method of making integrated circuit with reduced narrow-width effect
TEXAS INSTRUMENTS INC18 citations72
US5170234ADec 8, 1992
High density dynamic RAM with trench capacitor
TEXAS INSTRUMENTS INC4 citations62
US5049958ASep 17, 1991
Stacked capacitors for VLSI semiconductor devices
TEXAS INSTRUMENTS INC4 citations62
US4928267AMay 22, 1990
Method of reconditioning an electronically programmable memory device
TEXAS INSTRUMENTS INC3 citations60
US4891747AJan 2, 1990
Lightly-doped drain transistor structure in contactless DRAM cell with buried source/drain
TEXAS INSTRUMENTS INC1 citations52