Inventor

NG CHIU

US32 patents

⚠️ This page may combine multiple inventors who share the name “NG CHIU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NG CHIU

INT RECTIFIER CORP

Hydrogen implant for buffer zone of punch-through non epi IGBT

Angled implant for shorter trench emitter

Hydrogen implant for buffer zone of punch-through non EPI IGBT

Process for forming power MOSFET device in float zone, non-epitaxial silicon

Power transistor device having ultra deep increased concentration region

Deep gate trench IGBT

IGBT with buried emitter electrode

Process to create buried heavy metal at selected depth

Trench IGBT

Hybrid IGBT and MOSFET for zero current at zero voltage

Fast recovery diode and method for its manufacture

Fast recovery diode and method for its manufacture

Anneal-free process for forming weak collector

Diode with weak anode

Trench IGBT with depletion stop layer

High voltage non punch through IGBT for switch mode power supplies

Angled implant for shorter trench emitter

Process for manufacturing planar fast recovery diode using reduced number of masking steps

IGBT with amorphous silicon transparent collector

IGBT with amorphous silicon transparent collector

Trench IGBT for highly capacitive loads

INFINEON TECHNOLOGIES AMERICAS CORP

IGBT having deep gate trench

Bipolar semiconductor device with sub-cathode enhancement regions

IGBT with buried emitter electrode

Bipolar semiconductor device with multi-trench enhancement regions

Semiconductor device having a superjunction structure

Bipolar semiconductor device having a deep charge-balanced structure

IGBT having a deep superjunction structure

Bipolar semiconductor device having a charge-balanced inter-trench structure

IGBT having an inter-trench superjunction structure

FRANCIS RICHARD

Semiconductor device having increased switching speed

NG CHIU

Variable threshold trench IGBT with offset emitter contacts