Inventor
KIM JINBUM
KR77 patents
⚠️ This page may combine multiple inventors who share the name “KIM JINBUM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
44 patentsUS10079305B2Sep 18, 2018
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD25 citations94
US11362182B2Jun 14, 2022
Semiconductor device including superlattice pattern
SAMSUNG ELECTRONICS CO LTD14 citations93
US9905676B2Feb 27, 2018
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US12159911B2Dec 3, 2024
Semiconductor including active contact buried portions
SAMSUNG ELECTRONICS CO LTD2 citations73
US10062754B2Aug 28, 2018
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US9412731B2Aug 9, 2016
Semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations73
US11682673B2Jun 20, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations72
US12154988B2Nov 26, 2024
Multi-oxide-semiconductor field-effect transistor with stacked source/drain structure
SAMSUNG ELECTRONICS CO LTD2 citations71
US11322583B2May 3, 2022
Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the same
SAMSUNG ELECTRONICS CO LTD1 citations71
US11094832B2Aug 17, 2021
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD3 citations71
US9252244B2Feb 2, 2016
Methods of selectively growing source/drain regions of fin field effect transistor and method of manufacturing semiconductor device including a fin field effect transistor
SAMSUNG ELECTRONICS CO LTD4 citations70
US12453117B2Oct 21, 2025
Source/drain region of a semiconductor device having an oxygen doped barrier layer formed between first and second epitaxial layers
SAMSUNG ELECTRONICS CO LTD0 citations62
US12328937B2Jun 10, 2025
Integrated circuit devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12288805B2Apr 29, 2025
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12256564B2Mar 18, 2025
Semiconductor device having a liner layer and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12249505B2Mar 11, 2025
Semiconductor device including epitaxial region
SAMSUNG ELECTRONICS CO LTD0 citations62
US12243874B2Mar 4, 2025
Method of forming a static random-access memory (SRAM) cell with fin field effect transistors
SAMSUNG ELECTRONICS CO LTD0 citations62
US12166081B2Dec 10, 2024
Semiconductor device-including source and drain regions and superlattice pattern having a pillar shape
SAMSUNG ELECTRONICS CO LTD0 citations62
US12113108B2Oct 8, 2024
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD1 citations62
US12094974B2Sep 17, 2024
Semiconductor devices and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12034043B2Jul 9, 2024
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11888028B2Jan 30, 2024
Semiconductor device having a liner layer and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11881510B2Jan 23, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11869765B2Jan 9, 2024
Semiconductor device including epitaxial region
SAMSUNG ELECTRONICS CO LTD0 citations62
US11777001B2Oct 3, 2023
Semiconductor device including superlattice pattern
SAMSUNG ELECTRONICS CO LTD0 citations62
US11664453B2May 30, 2023
Semiconductor devices and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11626401B2Apr 11, 2023
Integrated circuit devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11532620B2Dec 20, 2022
Integrated circuit devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11482596B2Oct 25, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations62
US11417731B2Aug 16, 2022
Semiconductor device including a field effect transistor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11380541B2Jul 5, 2022
Semiconductor device including epitaxial region having an extended portion
SAMSUNG ELECTRONICS CO LTD0 citations62
US11205649B2Dec 21, 2021
Integrated circuit devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12178034B2Dec 24, 2024
Semiconductor device including buried contact and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12046682B2Jul 23, 2024
Integrated circuit devices
SAMSUNG ELECTRONICS CO LTD0 citations61
US11844207B2Dec 12, 2023
Semiconductor device including buried contact and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11710796B2Jul 25, 2023
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations61
US9530870B2Dec 27, 2016
Methods of fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations61
US9373703B2Jun 21, 2016
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations61
US12453141B2Oct 21, 2025
Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US11996443B2May 28, 2024
Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US11990549B2May 21, 2024
Semiconductor device including active region and gate structure
SAMSUNG ELECTRONICS CO LTD0 citations60
US11302815B2Apr 12, 2022
Semiconductor device including active region and gate structure
SAMSUNG ELECTRONICS CO LTD0 citations60
US12490468B2Dec 2, 2025
Semiconductor device including single-crystalline silicon oxide barrier pattern
SAMSUNG ELECTRONICS CO LTD0 citations59
US12159938B2Dec 3, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations59
SAMSUNG SDI CO LTD
3 patentsUS7655361B2Feb 2, 2010
Electrolyte for high voltage lithium rechargeable battery and high voltage lithium rechargeable battery employing the same
SAMSUNG SDI CO LTD32 citations91
US7592102B1Sep 22, 2009
Electrolyte for lithium ion secondary battery and lithium ion secondary battery comprising the same
SAMSUNG SDI CO LTD9 citations81
US7879499B2Feb 1, 2011
Electrolyte for lithium ion secondary battery and lithium ion secondary battery comprising the same
SAMSUNG SDI CO LTD5 citations71
LG ELECTRONICS INC
1 patentKIM JIN SUNG
1 patentKIM JINBUM
1 patentShowing the top 50 of 77 patents by PatentIndex Score.