P

Inventor

LEE SANGMOON

KR37 patents
⚠️ This page may combine multiple inventors who share the name “LEE SANGMOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

32 patents
US12159911B2Dec 3, 2024

Semiconductor including active contact buried portions

SAMSUNG ELECTRONICS CO LTD2 citations73
US11631670B2Apr 18, 2023

Semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations73
US11233151B2Jan 25, 2022

Active pattern structure and semiconductor device including the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US11171135B2Nov 9, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations73
US10692993B2Jun 23, 2020

Semiconductor device and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US11177346B2Nov 16, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations72
US11006210B2May 11, 2021

Apparatus and method for outputting audio signal, and display apparatus using the same

SAMSUNG ELECTRONICS CO LTD4 citations70
US11881213B2Jan 23, 2024

Electronic device, and method for controlling electronic device

SAMSUNG ELECTRONICS CO LTD2 citations68
US12453117B2Oct 21, 2025

Source/drain region of a semiconductor device having an oxygen doped barrier layer formed between first and second epitaxial layers

SAMSUNG ELECTRONICS CO LTD0 citations62
US12256564B2Mar 18, 2025

Semiconductor device having a liner layer and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US12249505B2Mar 11, 2025

Semiconductor device including epitaxial region

SAMSUNG ELECTRONICS CO LTD0 citations62
US12142671B2Nov 12, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US12094975B2Sep 17, 2024

Active pattern structure and semiconductor device including the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11961839B2Apr 16, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11888028B2Jan 30, 2024

Semiconductor device having a liner layer and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11869765B2Jan 9, 2024

Semiconductor device including epitaxial region

SAMSUNG ELECTRONICS CO LTD0 citations62
US11791400B2Oct 17, 2023

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11749754B2Sep 5, 2023

Active pattern structure and semiconductor device including the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11417731B2Aug 16, 2022

Semiconductor device including a field effect transistor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11380541B2Jul 5, 2022

Semiconductor device including epitaxial region having an extended portion

SAMSUNG ELECTRONICS CO LTD0 citations62
US11201087B2Dec 14, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11171224B2Nov 9, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US12490468B2Dec 2, 2025

Semiconductor device including single-crystalline silicon oxide barrier pattern

SAMSUNG ELECTRONICS CO LTD0 citations59
US12159938B2Dec 3, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations59
US12432973B2Sep 30, 2025

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations52
US10304834B2May 28, 2019

Semiconductor devices and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US12278271B2Apr 15, 2025

Semiconductor device having capping layers with different germanium concentrations over an active pattern

SAMSUNG ELECTRONICS CO LTD0 citations51
US12382685B2Aug 5, 2025

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations50
US11887617B2Jan 30, 2024

Electronic device for speech recognition and control method thereof

SAMSUNG ELECTRONICS CO LTD0 citations50
US12268022B2Apr 1, 2025

Semiconductor device including air gap regions below source/drain regions

SAMSUNG ELECTRONICS CO LTD0 citations49
US10707783B2Jul 7, 2020

Electrostatic induction device for performing power generating function

SAMSUNG ELECTRONICS CO LTD0 citations39
US9986082B2May 29, 2018

Interface device and method between electronic device and external device using ear jack of the electronic device

SAMSUNG ELECTRONICS CO LTD0 citations39

FRAUNHOFER GES FORSCHUNG

1 patent

GAUDIO LAB INC

1 patent

LEE SANGMOON

1 patent

CHOI JONGSUK

1 patent

KOREA INST SCI & TECH

1 patent