Inventor

GOTTI ANDREA

IT41 patents

⚠️ This page may combine multiple inventors who share the name “GOTTI ANDREA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GOTTI ANDREA

MICRON TECHNOLOGY INC

Apparatuses including electrodes having a conductive barrier material and methods of forming same

Memory cell with independently-sized electrode

Memory cells having a number of conductive diffusion barrier materials and manufacturing methods

Memory cells having a number of conductive diffusion barrier materials and manufacturing methods

Structures incorporating and methods of forming metal lines including carbon

Semiconductor structures including liners and related methods

Apparatuses including electrodes having a conductive barrier material and methods of forming same

Apparatuses including electrodes having a conductive barrier material and methods of forming same

Apparatuses including electrodes having a conductive barrier material and methods of forming same

Phase change memory cells including nitrogenated carbon materials, and related methods

Memory cell with independently-sized electrode

Dynamically boosting read voltage for a memory device

Semiconductor devices including liners, and related systems

Apparatuses including electrodes having a conductive barrier material and methods of forming same

Dynamically boosting read voltage for a memory device

Resistive interface material

Structures incorporating and methods of forming metal lines including carbon

Apparatuses including electrodes having a conductive barrier material and methods of forming same

Apparatuses including electrodes having a conductive barrier material and methods of forming same

Apparatuses including electrodes having a conductive barrier material and methods of forming same

Memory cell with independently-sized electrode

Electronic devices comprising metal oxide materials and related methods and systems

Techniques for forming memory structures

Fabrication of electrodes for memory cells

Techniques for forming memory structures

Fabrication of electrodes for memory cells

Depositing a storage node

Memory cells having a number of conductive diffusion barrier materials and manufacturing methods

Structures incorporating and methods of forming metal lines including carbon

Techniques for manufacturing a double electrode memory array

INTEL CORP

Doping of selector and storage materials of a memory cell

Electrode materials and interface layers to minimize chalcogenide interface resistance

Electrode materials and interface layers to minimize chalcogenide interface resistance

Doping of selector and storage materials of a memory cell

Memory structures having improved write endurance

Memory device with multi-layer liner structure

Phase change memory structures and devices

Memory structures having improved write endurance

LGL ELECTRONICS SPA

Control unit for yarn-braking devices in weft feeders for looms, and tuning method therefor

GOTTI ANDREA

Phase change memory cells including nitrogenated carbon materials, methods of forming the same, and phase change memory devices including nitrogenated carbon materials

ERBETTA DAVIDE

Forming electrodes for chalcogenide containing devices