Inventor

RAUSCH WERNER A

US28 patents

⚠️ This page may combine multiple inventors who share the name “RAUSCH WERNER A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

RAUSCH WERNER A

IBM

Vertical superconducting capacitors for transmon qubits

Method and manufacture of thin silicon on insulator (SOI) with recessed channel

Chemical treatment to retard diffusion in a semiconductor overlayer

Silicon on insulator field effect transistors having shared body contact

Structure and method for making strained channel field effect transistor using sacrificial spacer

Method of forming an electronic device on a recess in the surface of a thin film of silicon etched to a precise thickness

Halo-free non-rectifying contact on chip with halo source/drain diffusion

In situ doped embedded sige extension and source/drain for enhanced PFET performance

STI stress modification by nitrogen plasma treatment for improving performance in small width devices

Silicon on insulator field effect transistor having shared body contact

STI stress modification by nitrogen plasma treatment for improving performance in small width devices

Raised source drain mosfet with amorphous notched gate cap layer with notch sidewalls passivated and filled with dielectric plug

Structure and method for making strained channel field effect transistor using sacrificial spacer

Ultra shallow junction formation by epitaxial interface limited diffusion

Circuit layout similarity metric for semiconductor testsite coverage

Vertical superconducting capacitors for transmon qubits

Halo-free non-rectifying contact on chip with halo source/drain diffusion

Low resistance embedded strap for a trench capacitor

2-T SRAM cell structure and method

Method of creating asymmetric field-effect-transistors

Method and structure for forming multiple self-aligned gate stacks for logic devices

Vertical superconducting capacitors for transmon qubits

Faceted structure formed by self-limiting etch

Ultra shallow junction formation by epitaxial interface limited diffusion

GLOBALFOUNDRIES INC

Merged source drain epitaxy

LI YING

Split level shallow trench isolation for area efficient body contacts in SOI MOSFETS

CHEN HUAJIE

Ultra shallow junction formation by epitaxial interface limited diffusion

NUMMY KAREN A

Low resistance embedded strap for a trench capacitor