Inventor

YU SHAO-MING

TW90 patents

⚠️ This page may combine multiple inventors who share the name “YU SHAO-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YU SHAO-MING

TAIWAN SEMICONDUCTOR MFG CO LTD

Spacers for nanowire-based integrated circuit device and method of fabricating same

Method for forming stacked nanowire transistors

Low temperature film for PCRAM sidewall protection

Structure and formation method of semiconductor device structure with nanowires

Method of manufacturing a semiconductor device and a semiconductor device

Spacers for nanowire-based integrated circuit device and method of fabricating same

Method of manufacturing a semiconductor device and a semiconductor device

Method of manufacturing a semiconductor device and a semiconductor device

Method of manufacturing a semiconductor device and a semiconductor device

Structure and formation method of semiconductor device structure with nanowires

Method and related apparatus for integrating electronic memory in an integrated chip

Sidewall protection for PCRAM device

Phase-change memory device and method

Stacked nanowire transistors

Sidewall protection for PCRAM device

Memory cell, method of forming the same, and semiconductor device having the same

Structure and method for providing line end extensions for fin-type active regions

Method of manufacturing a semiconductor device and a semiconductor device

Method and related apparatus for integrating electronic memory in an integrated chip

Structure and formation method of semiconductor device structure with nanowires

Vertical transistor device and method for fabricating the same

Method for manufacturing a phase change memory device having a second opening above a first opening in the dielectric layer

Semiconductor device and method for manufacturing the same

Method for forming stacked nanowire transistors

Vertical transistor device and method for fabricating the same

Structure and method for providing line end extensions for fin-type active regions

Vertical transistor device and method for fabricating the same

Structure and method for transistors with line end extension

Structure and method for providing line end extensions for fin-type active regions

Method of manufacturing a semiconductor device and a semiconductor device

Phase change random access memory and method of manufacturing

Memory device and fabrication method thereof

Phase-change memory devices

Gate stacks for stack-fin channel I/O devices and nanowire channel core devices

Semiconductor devices with a double sided word line structure

Phase-change memory device and method

Memory device and semiconductor die having the memory device

Semiconductor device

Memory cell and semiconductor device having the same

Phase change memory device having tapered portion of the bottom memory layer

TAIWAN SEMICONDUCTOR MFG

Integrated circuit layout design

Integrated circuit layout design

Self aligned contact formation

Non-uniform semiconductor device active area pattern formation

YU SHAO-MING

Structure and method for transistor with line end extension

Semiconductor device and method for making the same using semiconductor fin density design rules

SHEN JENG-JUNG

Automatic layout conversion for FinFET device

FinFET boundary optimization

SHIEH MING-FENG

Method of fabrication of a semiconductor device having reduced pitch

CHEN HUNG-MING

Integrated circuit including FINFETs and methods for forming the same