Inventor
CHOI JUNGDAL
KR34 patents
⚠️ This page may combine multiple inventors who share the name “CHOI JUNGDAL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
9 patentsUS9559112B2Jan 31, 2017
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US7813183B2Oct 12, 2010
Program and erase methods for nonvolatile memory
SAMSUNG ELECTRONICS CO LTD9 citations83
US9036398B2May 19, 2015
Vertical resistance memory device and a read method thereof
SAMSUNG ELECTRONICS CO LTD3 citations63
US9401209B2Jul 26, 2016
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations61
US9466704B2Oct 11, 2016
Nonvolatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9502531B2Nov 22, 2016
Semiconductor device having fin-type field effect transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US8953382B2Feb 10, 2015
Vertical nonvolatile memory devices and methods of operating same
SAMSUNG ELECTRONICS CO LTD0 citations51
US8368138B2Feb 5, 2013
Non-volatile memory devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US8923058B2Dec 30, 2014
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations39
LEE CHANGHYUN
7 patentsUS9564237B2Feb 7, 2017
Nonvolatile memory device and read method thereof
LEE CHANGHYUN6 citations84
US9224493B2Dec 29, 2015
Nonvolatile memory device and read method thereof
LEE CHANGHYUN5 citations84
US8737129B2May 27, 2014
Nonvolatile memory device and read method thereof
LEE CHANGHYUN7 citations84
US8059466B2Nov 15, 2011
Memory system and programming method thereof
LEE CHANGHYUN10 citations84
US8107295B2Jan 31, 2012
Nonvolatile memory device and read method thereof
LEE CHANGHYUN16 citations82
US8446773B2May 21, 2013
Memory system and programming method thereof
LEE CHANGHYUN4 citations62
US8064259B2Nov 22, 2011
Nonvolatile NAND-type memory devices including charge storage layers connected to insulating layers
LEE CHANGHYUN4 citations60