Inventor
LIAO SONG-FU
TW14 patents
Patents
14 patentsUS11527649B1Dec 13, 2022
Ferroelectric field effect transistor devices and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations85
US12550383B2Feb 10, 2026
Double gate ferroelectric field effect transistor devices and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12363906B2Jul 15, 2025
3D lateral patterning via selective deposition for ferroelectric devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12324161B2Jun 3, 2025
Annealed seed layer to improve ferroelectric properties of memory layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12289890B2Apr 29, 2025
Method of fabricating transistor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12150309B2Nov 19, 2024
Double gate metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMIS-FET) structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12094935B2Sep 17, 2024
Method of selective film deposition and semiconductor feature made by the method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11917831B2Feb 27, 2024
Annealed seed layer to improve ferroelectric properties of memory layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11908936B2Feb 20, 2024
Double gate ferroelectric field effect transistor devices and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11817498B2Nov 14, 2023
Ferroelectric field effect transistor devices and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11810956B2Nov 7, 2023
In-situ thermal annealing of electrode to form seed layer for improving FeRAM performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11690228B2Jun 27, 2023
Annealed seed layer to improve ferroelectric properties of memory layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11652148B2May 16, 2023
Method of selective film deposition and semiconductor feature made by the method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12453137B2Oct 21, 2025
Ferroelectric memory devices having improved ferroelectric properties and methods of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51