Inventor
KIM GYEOM
KR34 patents
⚠️ This page may combine multiple inventors who share the name “KIM GYEOM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
33 patentsUS9761719B2Sep 12, 2017
Semiconductor device having silicon-germanium source/drain regions with varying germanium concentrations
SAMSUNG ELECTRONICS CO LTD19 citations92
US11688778B2Jun 27, 2023
Semiconductor device including three-dimensional field-effect transistor with curved multi-layered source/drain pattern
SAMSUNG ELECTRONICS CO LTD4 citations74
US12159911B2Dec 3, 2024
Semiconductor including active contact buried portions
SAMSUNG ELECTRONICS CO LTD2 citations73
US12027596B2Jul 2, 2024
Semiconductor device with source/drain pattern including buffer layer
SAMSUNG ELECTRONICS CO LTD2 citations73
US10084049B2Sep 25, 2018
Semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations73
US9559185B2Jan 31, 2017
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations73
US10008600B2Jun 26, 2018
Semiconductor device having silicon-germanium source/drain regions with varying germanium concentrations
SAMSUNG ELECTRONICS CO LTD3 citations72
US12328937B2Jun 10, 2025
Integrated circuit devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12288805B2Apr 29, 2025
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12249505B2Mar 11, 2025
Semiconductor device including epitaxial region
SAMSUNG ELECTRONICS CO LTD0 citations62
US12113108B2Oct 8, 2024
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD1 citations62
US12094974B2Sep 17, 2024
Semiconductor devices and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12034043B2Jul 9, 2024
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11869765B2Jan 9, 2024
Semiconductor device including epitaxial region
SAMSUNG ELECTRONICS CO LTD0 citations62
US11791400B2Oct 17, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11664453B2May 30, 2023
Semiconductor devices and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11626401B2Apr 11, 2023
Integrated circuit devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11380541B2Jul 5, 2022
Semiconductor device including epitaxial region having an extended portion
SAMSUNG ELECTRONICS CO LTD0 citations62
US11201087B2Dec 14, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11735663B2Aug 22, 2023
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11233150B2Jan 25, 2022
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US9530870B2Dec 27, 2016
Methods of fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations61
US11984507B2May 14, 2024
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations52
US12237383B2Feb 25, 2025
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations51
US10141427B2Nov 27, 2018
Methods of manufacturing semiconductor devices including gate pattern, multi-channel active pattern and diffusion layer
SAMSUNG ELECTRONICS CO LTD0 citations51
US12550392B2Feb 10, 2026
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations50
US12507451B2Dec 23, 2025
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations50
US12446262B2Oct 14, 2025
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations50
US12382685B2Aug 5, 2025
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations50
US12538521B2Jan 27, 2026
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations49
US12520546B2Jan 6, 2026
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations49
US12495590B2Dec 9, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations48
US11821106B2Nov 21, 2023
Semiconductor process chamber including lower volume upper dome
SAMSUNG ELECTRONICS CO LTD0 citations48