Inventor

AN HYEONG-GEUN

KR25 patents

⚠️ This page may combine multiple inventors who share the name “AN HYEONG-GEUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

AN HYEONG-GEUN

SAMSUNG ELECTRONICS CO LTD

Ferroelectric capacitors including a seed conductive film

Phase-change memory device having phase change material pattern shared between adjacent cells and electronic product including the phase-change memory

Phase changeable memory cell array region and method of forming the same

Ferroelectric memory device and method of forming the same

Method of fabricating integrated circuit devices having dielectric regions protected with multi-layer insulation structures

Ferroelectric memory device and method of fabricating the same

FRAM and method of fabricating the same

Ferroelectric memory device and method of forming the same

Methods of forming phase change memory devices having bottom electrodes

Phase change memory device and method of fabricating the same

Phase-changeable memory device and method of manufacturing the same

PRAMs having a plurality of active regions located vertically in sequence and methods of forming the same

Method of fabricating a ferroelectric memory device

Phase change memory devices including carbon-containing adhesive pattern

Integrated circuit devices having dielectric regions protected with multi-layer insulation structures

Phase changeable memory cell array region and method of forming the same

Contact structure, a semiconductor device employing the same, and methods of manufacturing the same

Phase change memory device and method of forming the same

PRAMS having a plurality of active regions located vertically in sequence and methods of forming the same

Methods of forming contact structures and semiconductor devices fabricated using contact structures

AN HYEONG-GEUN

Memory cells including resistance variable material patterns of different compositions

Nonvolatile memory device using variable resistive element

Nonvolatile memory cells having phase changeable patterns therein for data storage

KIM IK-SOO

Multi-level memory device using resistance material

LEE JIN-IL

Methods of forming a phase change memory device