Inventor
CONTIERO CLAUDIO
IT22 patents
⚠️ This page may combine multiple inventors who share the name “CONTIERO CLAUDIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SGS THOMSON MICROELECTRONICS
10 patentsUS5852314ADec 22, 1998
Thin epitaxy resurf integrated circuit containing high voltage p-channel and n-channel devices with source or drain not tied to ground
SGS THOMSON MICROELECTRONICS71 citations95
US6022778AFeb 8, 2000
Process for the manufacturing of integrated circuits comprising low-voltage and high-voltage DMOS-technology power devices and non-volatile memory cells
SGS THOMSON MICROELECTRONICS49 citations92
US5777366AJul 7, 1998
Integrated device with a structure for protection against high electric fields
SGS THOMSON MICROELECTRONICS21 citations92
US5126911AJun 30, 1992
Integrated circuit self-protected against reversal of the supply battery polarity
SGS THOMSON MICROELECTRONICS27 citations92
US5041895AAug 20, 1991
Mixed technology integrated device comprising complementary LDMOS power transistors, CMOS and vertical PNP integrated structures having an enhanced ability to withstand a relatively high supply voltage
SGS THOMSON MICROELECTRONICS67 citations92
US4757032AJul 12, 1988
Method for DMOS semiconductor device fabrication
SGS THOMSON MICROELECTRONICS32 citations92
USRE35442EFeb 4, 1997
Mixed technology integrated circuit comprising CMOS structures and efficient lateral bipolar transistors with a high early voltage and fabrication thereof
SGS THOMSON MICROELECTRONICS12 citations73
US5081517AJan 14, 1992
Mixed technology integrated circuit comprising CMOS structures and efficient lateral bipolar transistors with a high early voltage and fabrication thereof
SGS THOMSON MICROELECTRONICS14 citations73
US5837554ANov 17, 1998
Integrated circuit with EPROM cells
SGS THOMSON MICROELECTRONICS10 citations71
US5804884ASep 8, 1998
Surface electrical field delimiting structure for an integrated circuit
SGS THOMSON MICROELECTRONICS0 citations52
ST MICROELECTRONICS SRL
6 patentsUS5430316AJul 4, 1995
VDMOS transistor with improved breakdown characteristics
ST MICROELECTRONICS SRL122 citations95
US5610421AMar 11, 1997
Integrated circuit with EPROM cells
ST MICROELECTRONICS SRL81 citations94
US5589405ADec 31, 1996
Method for fabricating VDMOS transistor with improved breakdown characteristics
ST MICROELECTRONICS SRL47 citations93
USRE37424EOct 30, 2001
Mixed technology integrated device comprising complementary LDMOS power transistors, CMOS and vertical PNP integrated structures having an enhanced ability to withstand a relatively high supply voltage
ST MICROELECTRONICS SRL35 citations92
US6093588AJul 25, 2000
Process for fabricating a high voltage MOSFET
ST MICROELECTRONICS SRL36 citations89
US10062757B2Aug 28, 2018
Semiconductor device with buried metallic region, and method for manufacturing the semiconductor device
ST MICROELECTRONICS SRL8 citations81
SGS MICROELETTRONICA SPA
5 patentsUS4887142ADec 12, 1989
Monolithically integrated semiconductor device containing bipolar junction transistors, CMOS and DMOS transistors and low leakage diodes and a method for its fabrication
SGS MICROELETTRONICA SPA118 citations96
US4774198ASep 27, 1988
Self-aligned process for fabricating small DMOS cells
SGS MICROELETTRONICA SPA51 citations92
US4892836AJan 9, 1990
Method for manufacturing semiconductor integrated circuits including CMOS and high-voltage electronic devices
SGS MICROELETTRONICA SPA10 citations73
US4721686AJan 26, 1988
Manufacturing integrated circuits containing P-channel MOS transistors and bipolar transistors utilizing boron and arsenic as dopants
SGS MICROELETTRONICA SPA11 citations73
US4718977AJan 12, 1988
Process for forming semiconductor device having multi-thickness metallization
SGS MICROELETTRONICA SPA16 citations71