Inventor
KURODA KENICHI
JP112 patents
⚠️ This page may combine multiple inventors who share the name “KURODA KENICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
42 patentsUS6569742B1May 27, 2003
Method of manufacturing semiconductor integrated circuit device having silicide layers
HITACHI LTD125 citations99
US6026020AFeb 15, 2000
Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
HITACHI LTD107 citations99
US5581503ADec 3, 1996
Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
HITACHI LTD109 citations99
US5444664AAug 22, 1995
Flash memory and a microcomputer
HITACHI LTD194 citations99
US6121086ASep 19, 2000
Method of manufacturing a semiconductor integrated circuit device and a semiconductor integrated circuit device
HITACHI LTD112 citations98
US5550770AAug 27, 1996
Semiconductor memory device having ferroelectric capacitor memory cells with reading, writing and forced refreshing functions and a method of operating the same
HITACHI LTD122 citations98
US5548146AAug 20, 1996
Nonvolatile memory device having source and drain of memory cells integrally formed with data-source lines
HITACHI LTD120 citations98
US6503794B1Jan 7, 2003
Semiconductor integrated circuit device and method for manufacturing the same
HITACHI LTD96 citations97
US5768194AJun 16, 1998
Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
HITACHI LTD71 citations97
US6506647B2Jan 14, 2003
Method for fabricating a semiconductor integrated circuit device
HITACHI LTD72 citations96
US6493271B2Dec 10, 2002
Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
HITACHI LTD30 citations96
US6181598B1Jan 30, 2001
Data line disturbance free memory block divided flash memory and microcomputer having flash memory
HITACHI LTD43 citations96
US6166953ADec 26, 2000
Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
HITACHI LTD17 citations96
US6130836AOct 10, 2000
Semiconductor IC device having a control register for designating memory blocks for erasure
HITACHI LTD26 citations96
US5900008AMay 4, 1999
Semiconductor integrated circuit device
HITACHI LTD55 citations96
US5767544AJun 16, 1998
Semiconductor integrated circuit device
HITACHI LTD38 citations96
US5487029AJan 23, 1996
Semiconductor memory device having a non-volatile memory composed of ferroelectric capacitors which are selectively addressed
HITACHI LTD74 citations96
US5457335AOct 10, 1995
Floating gate FET with hydrogen barrier shield
HITACHI LTD49 citations96
US5352620AOct 4, 1994
Method of making semiconductor device with memory cells and peripheral transistors
HITACHI LTD69 citations96
US5057448AOct 15, 1991
Method of making a semiconductor device having DRAM cells and floating gate memory cells
HITACHI LTD90 citations96
US4697198ASep 29, 1987
MOSFET which reduces the short-channel effect
HITACHI LTD64 citations96
US4663645AMay 5, 1987
Semiconductor device of an LDD structure having a floating gate
HITACHI LTD95 citations96
US6743673B2Jun 1, 2004
Semiconductor integrated circuitry and method for manufacturing the circuitry
HITACHI LTD64 citations95
US6576512B2Jun 10, 2003
Method of manufacturing an EEPROM device
HITACHI LTD16 citations93
US6541333B2Apr 1, 2003
Semiconductor integrated circuit device and method of manufacturing the same
HITACHI LTD30 citations93
US6387744B2May 14, 2002
Process for manufacturing semiconductor integrated circuit device
HITACHI LTD23 citations93
US6211003B1Apr 3, 2001
Semiconductor integrated circuit device and process for manufacturing the same
HITACHI LTD33 citations93
US6069038AMay 30, 2000
Method of manufacturing a semiconductor integrated circuit device
HITACHI LTD45 citations93
US5747849AMay 5, 1998
Nonvolatile memory device having buried data lines and floating gate electrode on buried data lines
HITACHI LTD24 citations93
US5524093AJun 4, 1996
Semiconductor memory device having an arrangement to reduce stresses on non-selected ferroelectric capacitors while achieving high integration
HITACHI LTD49 citations93
US5445987AAug 29, 1995
Method of manufacturing a nonvolatile memory including a memory cell having a MISFET
HITACHI LTD26 citations93
US5383162AJan 17, 1995
Semiconductor memory device
HITACHI LTD22 citations92
US5194924AMar 16, 1993
Semiconductor device of an LDD structure having a floating gate
HITACHI LTD31 citations92
US4918501AApr 17, 1990
Semiconductor device and method of producing the same
HITACHI LTD32 citations92
US6576509B1Jun 10, 2003
Semiconductor integrated circuit device and method of manufacturing the same
HITACHI LTD32 citations90
US6690603B2Feb 10, 2004
Microcomputer including a flash memory that is two-way programmable
HITACHI LTD9 citations82
US6501689B2Dec 31, 2002
Semiconductor integrated circuit device
HITACHI LTD11 citations82
US6335879B1Jan 1, 2002
Method of erasing and programming a flash memory in a single-chip microcomputer having a processing unit and memory
HITACHI LTD13 citations82
US6064606AMay 16, 2000
Semiconductor integrated circuit device
HITACHI LTD12 citations82
US6064593AMay 16, 2000
Semiconductor integrated circuit device having an electrically erasable and programmable nonvolatile memory and a built-in processing unit
HITACHI LTD15 citations82
US5098855AMar 24, 1992
Semiconductor device and method of producing the same
HITACHI LTD21 citations82
US4784968ANov 15, 1988
Process for manufacturing a semiconductor device having MIS-type field effect transistors with impurity region below the gate electrode
HITACHI LTD20 citations82
RENESAS TECH CORP
4 patentsUS6693315B2Feb 17, 2004
Semiconductor device with an active region and plural dummy regions
RENESAS TECH CORP93 citations99
US7687914B2Mar 30, 2010
Semiconductor device and a method of manufacturing the same and designing the same
RENESAS TECH CORP13 citations93
US7166893B2Jan 23, 2007
Semiconductor integrated circuit device
RENESAS TECH CORP24 citations93
US7505329B2Mar 17, 2009
Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
RENESAS TECH CORP3 citations74
MITSUBISHI ELECTRIC CORP
2 patentsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD
2 patentsShowing the top 50 of 112 patents by PatentIndex Score.