P

Inventor

KURODA KENICHI

JP112 patents
⚠️ This page may combine multiple inventors who share the name “KURODA KENICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HITACHI LTD

42 patents
US6569742B1May 27, 2003

Method of manufacturing semiconductor integrated circuit device having silicide layers

HITACHI LTD125 citations99
US6026020AFeb 15, 2000

Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein

HITACHI LTD107 citations99
US5581503ADec 3, 1996

Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein

HITACHI LTD109 citations99
US5444664AAug 22, 1995

Flash memory and a microcomputer

HITACHI LTD194 citations99
US6121086ASep 19, 2000

Method of manufacturing a semiconductor integrated circuit device and a semiconductor integrated circuit device

HITACHI LTD112 citations98
US5550770AAug 27, 1996

Semiconductor memory device having ferroelectric capacitor memory cells with reading, writing and forced refreshing functions and a method of operating the same

HITACHI LTD122 citations98
US5548146AAug 20, 1996

Nonvolatile memory device having source and drain of memory cells integrally formed with data-source lines

HITACHI LTD120 citations98
US6503794B1Jan 7, 2003

Semiconductor integrated circuit device and method for manufacturing the same

HITACHI LTD96 citations97
US5768194AJun 16, 1998

Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein

HITACHI LTD71 citations97
US6506647B2Jan 14, 2003

Method for fabricating a semiconductor integrated circuit device

HITACHI LTD72 citations96
US6493271B2Dec 10, 2002

Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein

HITACHI LTD30 citations96
US6181598B1Jan 30, 2001

Data line disturbance free memory block divided flash memory and microcomputer having flash memory

HITACHI LTD43 citations96
US6166953ADec 26, 2000

Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein

HITACHI LTD17 citations96
US6130836AOct 10, 2000

Semiconductor IC device having a control register for designating memory blocks for erasure

HITACHI LTD26 citations96
US5900008AMay 4, 1999

Semiconductor integrated circuit device

HITACHI LTD55 citations96
US5767544AJun 16, 1998

Semiconductor integrated circuit device

HITACHI LTD38 citations96
US5487029AJan 23, 1996

Semiconductor memory device having a non-volatile memory composed of ferroelectric capacitors which are selectively addressed

HITACHI LTD74 citations96
US5457335AOct 10, 1995

Floating gate FET with hydrogen barrier shield

HITACHI LTD49 citations96
US5352620AOct 4, 1994

Method of making semiconductor device with memory cells and peripheral transistors

HITACHI LTD69 citations96
US5057448AOct 15, 1991

Method of making a semiconductor device having DRAM cells and floating gate memory cells

HITACHI LTD90 citations96
US4697198ASep 29, 1987

MOSFET which reduces the short-channel effect

HITACHI LTD64 citations96
US4663645AMay 5, 1987

Semiconductor device of an LDD structure having a floating gate

HITACHI LTD95 citations96
US6743673B2Jun 1, 2004

Semiconductor integrated circuitry and method for manufacturing the circuitry

HITACHI LTD64 citations95
US6576512B2Jun 10, 2003

Method of manufacturing an EEPROM device

HITACHI LTD16 citations93
US6541333B2Apr 1, 2003

Semiconductor integrated circuit device and method of manufacturing the same

HITACHI LTD30 citations93
US6387744B2May 14, 2002

Process for manufacturing semiconductor integrated circuit device

HITACHI LTD23 citations93
US6211003B1Apr 3, 2001

Semiconductor integrated circuit device and process for manufacturing the same

HITACHI LTD33 citations93
US6069038AMay 30, 2000

Method of manufacturing a semiconductor integrated circuit device

HITACHI LTD45 citations93
US5747849AMay 5, 1998

Nonvolatile memory device having buried data lines and floating gate electrode on buried data lines

HITACHI LTD24 citations93
US5524093AJun 4, 1996

Semiconductor memory device having an arrangement to reduce stresses on non-selected ferroelectric capacitors while achieving high integration

HITACHI LTD49 citations93
US5445987AAug 29, 1995

Method of manufacturing a nonvolatile memory including a memory cell having a MISFET

HITACHI LTD26 citations93
US5383162AJan 17, 1995

Semiconductor memory device

HITACHI LTD22 citations92
US5194924AMar 16, 1993

Semiconductor device of an LDD structure having a floating gate

HITACHI LTD31 citations92
US4918501AApr 17, 1990

Semiconductor device and method of producing the same

HITACHI LTD32 citations92
US6576509B1Jun 10, 2003

Semiconductor integrated circuit device and method of manufacturing the same

HITACHI LTD32 citations90
US6690603B2Feb 10, 2004

Microcomputer including a flash memory that is two-way programmable

HITACHI LTD9 citations82
US6501689B2Dec 31, 2002

Semiconductor integrated circuit device

HITACHI LTD11 citations82
US6335879B1Jan 1, 2002

Method of erasing and programming a flash memory in a single-chip microcomputer having a processing unit and memory

HITACHI LTD13 citations82
US6064606AMay 16, 2000

Semiconductor integrated circuit device

HITACHI LTD12 citations82
US6064593AMay 16, 2000

Semiconductor integrated circuit device having an electrically erasable and programmable nonvolatile memory and a built-in processing unit

HITACHI LTD15 citations82
US5098855AMar 24, 1992

Semiconductor device and method of producing the same

HITACHI LTD21 citations82
US4784968ANov 15, 1988

Process for manufacturing a semiconductor device having MIS-type field effect transistors with impurity region below the gate electrode

HITACHI LTD20 citations82

RENESAS TECH CORP

4 patents

MITSUBISHI ELECTRIC CORP

2 patents

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

2 patents

Showing the top 50 of 112 patents by PatentIndex Score.