Inventor
GALBIATI PAOLA
IT17 patents
⚠️ This page may combine multiple inventors who share the name “GALBIATI PAOLA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SRL
6 patentsUSRE37424EOct 30, 2001
Mixed technology integrated device comprising complementary LDMOS power transistors, CMOS and vertical PNP integrated structures having an enhanced ability to withstand a relatively high supply voltage
ST MICROELECTRONICS SRL35 citations92
US6093588AJul 25, 2000
Process for fabricating a high voltage MOSFET
ST MICROELECTRONICS SRL36 citations89
US5629558AMay 13, 1997
Semiconductor diode integrated with bipolar/CMOS/DMOS technology
ST MICROELECTRONICS SRL16 citations82
US6538281B2Mar 25, 2003
Low on-resistance LDMOS
ST MICROELECTRONICS SRL6 citations59
US6271567B1Aug 7, 2001
Belowground and oversupply protection of junction isolated integrated circuits
ST MICROELECTRONICS SRL1 citations51
US7126230B2Oct 24, 2006
Semiconductor electronic device and method of manufacturing thereof
ST MICROELECTRONICS SRL0 citations46
SGS THOMSON MICROELECTRONICS
5 patentsUS6022778AFeb 8, 2000
Process for the manufacturing of integrated circuits comprising low-voltage and high-voltage DMOS-technology power devices and non-volatile memory cells
SGS THOMSON MICROELECTRONICS49 citations92
US5041895AAug 20, 1991
Mixed technology integrated device comprising complementary LDMOS power transistors, CMOS and vertical PNP integrated structures having an enhanced ability to withstand a relatively high supply voltage
SGS THOMSON MICROELECTRONICS67 citations92
USRE35442EFeb 4, 1997
Mixed technology integrated circuit comprising CMOS structures and efficient lateral bipolar transistors with a high early voltage and fabrication thereof
SGS THOMSON MICROELECTRONICS12 citations73
US5081517AJan 14, 1992
Mixed technology integrated circuit comprising CMOS structures and efficient lateral bipolar transistors with a high early voltage and fabrication thereof
SGS THOMSON MICROELECTRONICS14 citations73
US5789288AAug 4, 1998
Process for the fabrication of semiconductor devices having various buried regions
SGS THOMSON MICROELECTRONICS11 citations68
SGS MICROELETTRONICA SPA
4 patentsUS4887142ADec 12, 1989
Monolithically integrated semiconductor device containing bipolar junction transistors, CMOS and DMOS transistors and low leakage diodes and a method for its fabrication
SGS MICROELETTRONICA SPA118 citations96
US4774198ASep 27, 1988
Self-aligned process for fabricating small DMOS cells
SGS MICROELETTRONICA SPA51 citations92
US4892836AJan 9, 1990
Method for manufacturing semiconductor integrated circuits including CMOS and high-voltage electronic devices
SGS MICROELETTRONICA SPA10 citations73
US4721686AJan 26, 1988
Manufacturing integrated circuits containing P-channel MOS transistors and bipolar transistors utilizing boron and arsenic as dopants
SGS MICROELETTRONICA SPA11 citations73