Inventor
PURAYATH VINOD ROBERT
US30 patents
⚠️ This page may combine multiple inventors who share the name “PURAYATH VINOD ROBERT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
PURAYATH VINOD ROBERT
8 patentsUS8603890B2Dec 10, 2013
Air gap isolation in non-volatile memory
PURAYATH VINOD ROBERT26 citations92
US8492224B2Jul 23, 2013
Metal control gate structures and air gap isolation in non-volatile memory
PURAYATH VINOD ROBERT19 citations92
US8946048B2Feb 3, 2015
Method of fabricating non-volatile memory with flat cell structures and air gap isolation
PURAYATH VINOD ROBERT9 citations84
US8193055B1Jun 5, 2012
Method of forming memory with floating gates including self-aligned metal nanodots using a polymer solution
PURAYATH VINOD ROBERT9 citations84
US8097498B2Jan 17, 2012
Damascene method of making a nonvolatile memory device
PURAYATH VINOD ROBERT16 citations84
US8263465B2Sep 11, 2012
Method of forming memory with floating gates including self-aligned metal nanodots using a coupling layer
PURAYATH VINOD ROBERT2 citations62
US8222091B2Jul 17, 2012
Damascene method of making a nonvolatile memory device
PURAYATH VINOD ROBERT3 citations62
US8207036B2Jun 26, 2012
Method for forming self-aligned dielectric cap above floating gate
PURAYATH VINOD ROBERT4 citations62
SANDISK TECHNOLOGIES INC
6 patentsUS8461641B2Jun 11, 2013
Ultrahigh density vertical NAND memory device and method of making thereof
SANDISK TECHNOLOGIES INC42 citations98
US8383479B2Feb 26, 2013
Integrated nanostructure-based non-volatile memory fabrication
SANDISK TECHNOLOGIES INC33 citations93
US9698149B2Jul 4, 2017
Non-volatile memory with flat cell structures and air gap isolation
SANDISK TECHNOLOGIES INC9 citations84
US8946022B2Feb 3, 2015
Integrated nanostructure-based non-volatile memory fabrication
SANDISK TECHNOLOGIES INC4 citations73
US8803220B2Aug 12, 2014
P-type control gate in non-volatile storage
SANDISK TECHNOLOGIES INC2 citations62
US9379120B2Jun 28, 2016
Metal control gate structures and air gap isolation in non-volatile memory
SANDISK TECHNOLOGIES INC0 citations51
SANDISK CORP
5 patentsUS7615447B2Nov 10, 2009
Composite charge storage structure formation in non-volatile memory using etch stop technologies
SANDISK CORP17 citations93
US7723186B2May 25, 2010
Method of forming memory with floating gates including self-aligned metal nanodots using a coupling layer
SANDISK CORP26 citations92
US7939407B2May 10, 2011
Composite charge storage structure formation in non-volatile memory using etch stop technologies
SANDISK CORP4 citations63
US7888210B2Feb 15, 2011
Non-volatile memory fabrication and isolation for composite charge storage structures
SANDISK CORP5 citations63
US7807529B2Oct 5, 2010
Lithographically space-defined charge storage regions in non-volatile memory
SANDISK CORP5 citations63
APPLIED MATERIALS INC
3 patentsUS9960045B1May 1, 2018
Charge-trap layer separation and word-line isolation for enhanced 3-D NAND structure
APPLIED MATERIALS INC113 citations98
US10790298B2Sep 29, 2020
Methods and apparatus for three-dimensional NAND structure fabrication
APPLIED MATERIALS INC9 citations84
US10468259B2Nov 5, 2019
Charge-trap layer separation and word-line isolation in a 3-D NAND structure
APPLIED MATERIALS INC10 citations84